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2024 Vol.34, Issue 3 Preview Page

Research Paper

Development of Eco-Friendly Ag Embedded Peroxo Titanium Complex Solution Based Thin Film and Electrical Behaviors of Resistive Random Access Memory
Won Jin Kim1*
,
Jinho Lee2*
,
Ryun Na Kim2
,
Donghee Lee2
,
Woo-Byoung Kim12†
1Department of Foundry Engineering, Dankook University, Youngin 16890, Republic of Korea
2Department of Energy Engineering, Dankook University, Cheonan 31116, Republic of Korea
†Corresponding author E-Mail : woo7838@dankook.ac.kr (W.-B. Kim, Dankook Univ.)
*These two authors are equally contributed as first authors.
27 March 2024. pp. 152-162
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Abstract

In this study, we introduce a novel TiN/Ag embedded TiO2/FTO resistive random-access memory (RRAM) device. This distinctive device was fabricated using an environmentally sustainable, solution-based thin film manufacturing process. Utilizing the peroxo titanium complex (PTC) method, we successfully incorporated Ag precursors into the device architecture, markedly enhancing its performance. This innovative approach effectively mitigates the random filament formation typically observed in RRAM devices, and leverages the seed effect to guide filament growth. As a result, the device demonstrates switching behavior at substantially reduced voltage and current levels, heralding a new era of low-power RRAM operation. The changes occurring within the insulator depending on Ag contents were confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Additionally, we confirmed the correlation between Ag and oxygen vacancies (Vo). The current-voltage (I-V) curves obtained suggest that as the Ag content increases there is a change in the operating mechanism, from the space charge limited conduction (SCLC) model to ionic conduction mechanism. We propose a new filament model based on changes in filament configuration and the change in conduction mechanisms. Further, we propose a novel filament model that encapsulates this shift in conduction behavior. This model illustrates how introducing Ag alters the filament configuration within the device, leading to a more efficient and controlled resistive switching process.

Keywords
resistive random-access memory
peroxo titanium complex
resistive switching
Ag embedded TiO2
conduction mechanism
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 34
  • No :3
  • Pages :152-162
  • Received Date : 2024-02-16
  • Revised Date : 2024-03-20
  • Accepted Date : 2024-03-21
  • DOI :https://doi.org/10.3740/MRSK.2024.34.3.152
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