Effect of Laser Ablation on Rear Passivation Stack for N-type Bifacial Solar Cell Application

Kiryun Kim; Hyo Sik Chang

doi:10.3740/MRSK.2020.30.5.262

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2020 Vol.30, Issue 5 Preview Page Next Page

Effect of Laser Ablation on Rear Passivation Stack for N-type Bifacial Solar Cell Application N형 양면 수광 태양전지를 위한 레이저 공정의 후면 패시베이션 적층 구조 영향성

May 2020. pp. 262-266

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Abstract

In this paper, we investigated the effect of the passivation stack with Al₂O₃, hydrogenated silicon nitride (SiN_x:H) stack and Al₂O₃, silicon oxynitride (SiON_x) stack in the n type bifacial solar cell on monocrystalline silicon. SiN_x:H and SiON_x films were deposited by plasma enhanced chemical vapor deposition on the Al₂O₃ thin film deposited by thermal atomic layer deposition. We focus on passivation properties of the two stack structure after laser ablation process in order to improve bifaciality of the cell. Our results showed SiN_x:H with Al₂O₃ stack is 10 mV higher in implied open circuit voltage and 60 μs higher in minority carrier lifetime than SiON_x with Al₂O₃ stack at Ni silicide formation temperature for 1.8% open area ratio. This can be explained by hydrogen passivation at the Al₂O₃/Si interface and Al₂O₃ layer of laser damaged area during annealing.

Keywords

bifacial solar cell

passivation effect

laser ablation

atomic layer deposition

n type Si

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Information

Publisher :Materials Research Society of Korea
Publisher(Ko) :한국재료학회
Journal Title :Korean Journal of Materials Research
Journal Title(Ko) :한국재료학회지
Volume : 30
No :5
Pages :262-266
Received Date : 2020-04-27
Revised Date : 2020-05-08
Accepted Date : 2020-05-08
DOI :https://doi.org/10.3740/MRSK.2020.30.5.262

Korean Journal of Materials Research ISSN:1225-0562(Print) 2287-7258(Online) 한국재료학회지

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