Influence of Electron Beam Irradiation on the Electrical Properties of Zn-Sn-O Thin Film Transistor

In-Hwan Cho; Kyoung-Il Jo; Jun Hyuk Choi; Hai-Woong Park; Chan-Joong Kim; Byung-Hyuk Jun

doi:10.3740/MRSK.2017.27.4.216

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Influence of Electron Beam Irradiation on the Electrical Properties of Zn-Sn-O Thin Film Transistor Zn-Sn-O 박막 트랜지스터의 전기적 특성에 대한 전자빔 조사의 영향

April 2017. pp. 216-220

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Abstract

The effect of electron beam (EB) irradiation on the electrical properties of Zn-Sn-O (ZTO) thin films fabricated using a sol-gel process was investigated. As the EB dose increased, the saturation mobility of ZTO thin film transistors (TFTs) was found to slightly decrease, and the subthreshold swing and on/off ratio degenerated. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies (V_O) increased from 10.35 to 12.56 % as the EB dose increased from 0 to 7.5 × 10¹⁶ electrons/cm². Also, spectroscopic ellipsometry analysis showed that the optical band gap varied from 3.53 to 3.96 eV with increasing EB dose. From the results of the electrical property and XPS analyses of the ZTO TFTs, it was found that the electrical characteristic of the ZTO thin films changed from semiconductor to conductor with increasing EB dose. It is thought that the electrical property change is due to the formation of defect sites like oxygen vacancies.

Keywords

Zn-Sn-O thin film

oxide semiconductor

electron beam irradiation

electrical property

oxygen vacancy

sol-gel

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Information

Publisher :Materials Research Society of Korea
Publisher(Ko) :한국재료학회
Journal Title :Korean Journal of Materials Research
Journal Title(Ko) :한국재료학회지
Volume : 27
No :4
Pages :216-220
Received Date : 2017-01-25
Revised Date : 2017-03-14
Accepted Date : 2017-03-14
DOI :https://doi.org/10.3740/MRSK.2017.27.4.216

Korean Journal of Materials Research ISSN:1225-0562(Print) 2287-7258(Online) 한국재료학회지

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