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2017 Vol.27, Issue 4 Preview Page
Characterizations of Thermal Compound Using CuO Particles Grown by Wet Oxidation Method

습식 산화법으로 성장된 산화구리입자를 이용한 방열 컴파운드 제조 및 특성 연구

Dong Woo Lee
,
Chang Hyun Um
,
Jae Uk Chu†
이 동우
,
엄 창현
,
주 제욱†
Research & Development Institute, Youngyiel Precision Co., Ltd. 13 Beoman-ro 9il, Geumcheon-gu, Seoul 08587, Republic of Korea
(주) 영일 프레시젼
†Corresponding author E-Mail : Jkchu@youngyiel.co.kr (J .U. Chu, Youngyiel Co., Ltd.)
April 2017. pp. 221-228
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Abstract

Various morphologies of copper oxide (CuO) have been considered to be of both fundamental and practical importance in the field of electronic materials. In this study, using Cu (0.1 μm and 7 μm) particles, flake-type CuO particles were grown via a wet oxidation method for 5min and 60min at 75 °C. Using the prepared CuO, AlN, and silicone base as reagents, thermal interface material (TIM) compounds were synthesized using a high speed paste mixer. The properties of the thermal compounds prepared using the CuO particles were observed by thermal conductivity and breakdown voltage measurement. Most importantly, the volume of thermal compounds created using CuO particles grown from 0.1 μm Cu particles increased by 192.5% and 125 % depending on the growth time. The composition of CuO was confirmed by X-ray diffraction (XRD) analysis; cross sections of the grown CuO particles were observed using focused ion beam (FIB), field emission scanning electron microscopy (FE-SEM), and energy dispersive analysis by X-ray (EDAX). In addition, the thermal compound dispersion of the Cu and Al elements were observed by X-ray elemental mapping.

Keywords
copper oxide
wet oxidation method
thermal interface material
thermal conductivity
breakdown voltage
References
1.
D. D. L. Chung, J. Mater. Eng. Perform., 10, 56 (2001). 10.1361/105994901770345358
2.
E. Zambolin and D. D. Col, Sol. Energy, 84, 1382 (2010). 10.1016/j.solener.2010.04.020
3.
M. L. S. Fuller, M. Kasrai, G. M. Bancroft, K. Fyfe and K. H. Tan, Tribol. Int., 31, 627 (1998). 10.1016/S0301-679X(98)00084-X
4.
W. K. Loh, A. D. Crocombe, M. M. A. Wahab and I. A. Ashcroft, Int. J. Adhes. Adhes., 25, 1 (2005). 10.1016/j.ijadhadh.2004.02.002
5.
J. P. Gwinn and R. L. Webb, Microelectron. J., 34, 215 (2003). 10.1016/S0026-2692(02)00191-X
6.
R. Prasher, Proc. IEEE, 94, 1571 (2006). 10.1109/JPROC.2006.879796
7.
G.-W. Lee, M. Park, J. Kim, J. I. Lee and H. G. Yoon Compos. Appl. Sci. Manuf., 37, 727 (2006). 10.1016/j.compositesa.2005.07.006
8.
A. Yu, P. Ramesh, X. Sun, E. Bekyarova, M. E. Itkis and R. C. Haddon, Adv. Mater., 20, 4740 (2008). 10.1002/adma.200800401
9.
W. Yu, J. Zhao, M. Wang, Y. Hu, L. Chen and H. Xie, Nanoscale Res. Lett., 10, 113 (2015). 10.1186/s11671-015-0822-625852408PMC4385151
10.
M. S. Liu, M. C. Lin and C. C. Wang, Nanoscale Res. Lett., 6, 297 (2011). 10.1186/1556-276X-6-29721711787PMC3211363
11.
M. N. Rashin and J. Hemalatha, J. Mol. Liq., 197, 257 (2014). 10.1016/j.molliq.2014.05.024
12.
M. S. Liu, M. C. Lin, I. T. Huang and C. C. Wang, Chem. Eng. Technol., 29, 72 (2006). 10.1002/ceat.200500184
13.
S. U. S. Choi and J. A. Eastman, in ASME International Mechanical Engineering Congress & Exposition (San Francisco, CA, November 1995).
14.
K. Ahn, K. Kim, J. Kim and W. Cho, Polym (in Korea)., 39, 961 (2015). 10.7317/pk.2015.39.6.961
15.
C. Zhi, Y. Bando, T. Terao, C. Tang, H. Kuwahara and D. Golberg, Adv. Funct. Mater., 19, 1857 (2009). 10.1002/adfm.200801435
16.
J. A. Parkinson and S. E. Allen, Commun. Soil Sci. Plant Anal. 6, 1 (1975). 10.1080/00103627509366539
17.
C. T. Murray, P. Kendall, A. Larson, C. Harvey and G. Staus, Thermal Conductivity, 28, 309 (2006).
18.
Y. Zhu, K. Mimura and M. Isshiki, Mater. Trans., 43, 2173 (2002). 10.2320/matertrans.43.2173
19.
J. H. Park and K. Natesan, Oxid. Met., 39, 411 (1993). 10.1007/BF00664664
20.
O. Peña-Rodríguez and U. Pal, J. Opt. Soc. Am. B, 28, 2735 (2011). 10.1364/JOSAB.28.002735
21.
J. Jiang, G. Oberdörster and P. Biswas, J. Nanopart. Res., 11, 77 (2009). 10.1007/s11051-008-9446-4
22.
Z. Ai, L. Zhang, S. Lee and W. Ho, J. Phys. Chem. C, 113, 20896 (2009). 10.1021/jp9083647
23.
R. Tsu, J. W. Mcpherson and W. R. Mckee, 38th Annual International Reliability Physics Symposium (San Jose, California, 2000).
24.
U. Nerle and M. K. Rabinal, IOSR J. Appl. Phys., 5, 1 (2013). 10.9790/4861-0510107
25.
J. Hong and S.-E. Shim, Appl. Chem. Eng. (in Korea), 21, 115 (2010).
Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 27
  • No :4
  • Pages :221-228
  • Received Date : 2016-05-31
  • Revised Date : 2017-03-14
  • Accepted Date : 2017-03-16
  • DOI :https://doi.org/10.3740/MRSK.2017.27.4.221
Journal Informaiton Korean Journal of Materials Research Korean Journal of Materials Research
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