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2020 Vol.30, Issue 11 Preview Page
The Effect of Microwave Annealing Time on the Electrical Characteristics for InGaZnO Thin-Film Transistors

마이크로파 조사 시간에 따른 InGaZnO 박막 트랜지스터의 전기적 특성 평가

Seong Cheol Jang1
,
Ji-Min Park1
,
Hyoung-Do Kim1
,
Hyun Seok Lee2†
,
Hyun-Suk Kim1†
장 성철1
,
박 지민1
,
김 형도1
,
이 현석2†
,
김 현석1†
1Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea
2Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, Cheongju 28644, Republic of Korea
1충남대학교 신소재공학과
2충북대학교 물리학과
†Corresponding author E-Mail : hsl@chungbuk.ac.kr (H. S. Lee, Chungbuk Nat’l Univ.) khs3297@cnu.ac.kr (H.-S. Kim, Chungnam Nat’l Univ.)
October 2020. pp. 615-620
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Abstract

Oxide semiconductor, represented by a-IGZO, has been commercialized in the market as active layer of TFTs of display backplanes due to its various advantages over a-Si. a-IGZO can be deposited at room temperature by RF magnetron sputtering process; however, additional thermal annealing above 300oC is required to obtain good semiconducting properties and stability. These temperature are too high for common flexible substrates like PET, PEN, and PI. In this work, effects of microwave annealing time on IGZO thin film and associated thin-film transistors are demonstrated. As the microwave annealing time increases, the electrical properties of a-IGZO TFT improve to a degree similar to that during thermal annealing. Optimal microwave annealed IGZO TFT exhibits mobility, SS, Vth, and VH of 6.45 cm2/Vs, 0.17 V/dec, 1.53 V, and 0.47 V, respectively. PBS and NBS stability tests confirm that microwave annealing can effectively improve the interface between the dielectric and the active layer.

Keywords
thin-film transistors
microwave annealing
low temperature
IGZO
References
1.
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano and H. Hosono, Nature, 432, 488 (2004). 10.1038/nature0309015565150
2.
K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano and H. Hosono, Jpn. J. Appl. Phys., 45, 4303 (2006). 10.1143/JJAP.45.4303
3.
T. Kamiya, K. Nomura and H. Hosono, Jpn. J. Appl. Phys., 11, 044305 (2010). 10.1088/1468-6996/11/4/04430527877346PMC5090337
4.
J. H. Lee, D. H. Kim, D. J. Yang, S. Y. Hong, K. S. Yoon, P. S. Hong, C. O. Jeong, H. S. Park, S. Y. Kim and S. K. Lim, SID 08 Dig., 39, 625 (2008). 10.1889/1.3069740
5.
T. Arai, J. Soc. Inf. Display, 20, 156 (2012). 10.1889/JSID20.3.156
6.
J. S. Park, W.-J. Maeng, H.-S. Kim and J.-S. Park, Thin Solid Films, 520, 1679 (2012). 10.1016/j.tsf.2011.07.018
7.
H.-W. Zan, W.-T. Chen, C.-W. Chou, C.-C. Tsai, C.-N. Huang and H.-W. Hsueh, Electrochem. Solid State Lett., 13, H144 (2010). 10.1149/1.3313201
8.
M. G. Stanford, J. H. Noh, K. Mahady, A. V. Ievlev, P. Maksymovych, O. S. Ovchinnikova and P. D. Rack, ACS Appl. Mater. Interfaces, 9, 35125 (2017). 10.1021/acsami.7b1044928933531
9.
C. Liu, Y. Sun, H. Qin, Y. Liu, S. Wei and Y. Zhao, IEEE Electron Device Lett., 40, 415 (2019). 10.1109/LED.2019.2896111
10.
J. Sheng, H. J. Lee, S. Oh and J. S. Park, ACS Appl. Mater. Interfaces, 8, 33821 (2016). 10.1021/acsami.6b1177427960372
11.
J. W. Park, B. H. Kang and H. J. Kim, Adv. Funct. Mater., 30, 1904632 (2020). 10.1002/adfm.201904632
12.
J. S. Hur, J. O. Kim, H. A. Kim and J. K. Jeong, ACS Appl. Mater. Interfaces, 11, 21675 (2019). 10.1021/acsami.9b0293531124358
13.
H.-C. Cheng and C.-Y. Tsay, J. Alloys Compd., 507, L1 (2010). 10.1016/j.jallcom.2010.06.166
14.
S. C. Jang, J. Park, H.-D. Kim, H. Hong, K.-B. Chung, Y. J. Kim and H.-S. Kim, AIP Adv., 9, 025204 (2019). 10.1063/1.5082862
15.
I. K. Lee, K. H. Lee, S. Lee and W. J. Cho, ACS Appl. Mater. Interfaces, 6, 22680 (2014). 10.1021/am506805a25456792
16.
A. Sáenz-Trevizo, P. Amézaga-Madrid, P. Pizá-Ruiz, W. Antúnez-Flores and M. Miki-Yoshida, Mater. Res., 19, 33 (2016). 10.1590/1980-5373-mr-2015-0612
17.
J. Tauc, R. Grigorovici and A. Vancu, Phys. Status Solidi B, 15, 627 (1966) 10.1002/pssb.19660150224
18.
A. Suresh and J. Muth, Appl. Phys. Lett., 92, 033502 (2008). 10.1063/1.2824758
19.
J. Su, H. Yang, Y. Ma, R. Li, L. Jia, D. Liu and X. Zhang, Mater. Sci. Semicond. Process, 113, 105040 (2020). 10.1016/j.mssp.2020.105040
20.
J. K. Jeong, H. Won Yang, J. H. Jeong, Y.-G. Mo and H. D. Kim, Appl. Phys. Lett., 93, 123508 (2008). 10.1063/1.2990657
Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 30
  • No :11
  • Pages :615-620
  • Received Date : 2020-10-05
  • Revised Date : 2020-10-13
  • Accepted Date : 2020-10-13
  • DOI :https://doi.org/10.3740/MRSK.2020.30.11.615
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