All Issue

2021 Vol.31, Issue 10
Effect of Sm2O3 Doping on Microstructure and Electrical Properties of ZPCCA-Based Varistors
Choon-Woo Nahm†
Department of Electrical Engineering, Dongeui University, Busan 47340, Republic of Korea
†Corresponding author E-Mail : cwnahm@deu.ac.kr (C.-W. Nahm, Dongeui Univ.)
October 2021. pp. 539-545
PDF XML Citation
Abstract

The effect of Sm2O3 doping on the microstructure and electrical properties of the ZPCCA-based varistors is comprehensively investigated. The increase of doping content of Sm2O3 results in better densification (from 5.70 to 5.82 g/cm3) and smaller mean grain size (from 7.8 to 4.1 μm). The breakdown electric field increases significantly from 2568 to 6800 V/ cm as the doping content of Sm2O3 increases. The doping of Sm2O3 remarkably improves the nonlinear properties (increasing from 23.9 to 91 in the nonlinear coefficient and decreasing from 35.2 to 0.2 μA/cm2 in the leakage current density). Meanwhile, the doping of Sm2O3 reduces the donor concentration (the range of 2.73 × 1018 to 1.18 × 1018 cm-3) of bulk grain and increases the barrier height (the range of 1.10 to 1.49 eV) at the grain boundary. The density of the interface states decreases in the range of of 5.31 × 1012 to 4.08 × 1012 cm-2 with the increase of doping content of Sm2O3. The dielectric constant decreases from 1594.8 to 507.5 with the increase of doping content of Sm2O3.

Keywords
Sm2O3
microstructure
electrical properties
ZPCCA-based varistors
References
1.
M. Matsuoka, Jpn. J. Appl. Phys., 10, 736 (1971). 10.1143/JJAP.10.736
2.
K. Mukae, K. Tsuda and I. Nagasawa, Jpn. J. Appl. Phys., 16, 1361 (1977). 10.1143/JJAP.16.1361
3.
K. Mukae, Ceram. Bull., 66, 1329 (1987).
4.
K. Mukae, K. Tsuda and S. Shiga, IEEE Tran. Power Delivery, 3, 591 (1988). 10.1109/61.4296
5.
H. K. Varma, K. P. Kumar, K. G. K. Warrier and A. D. Damodaran, J. Mater. Sci. Lett., 8, 974 (1989). 10.1007/BF01729966
6.
A. B. Alles and V. L. Burdick, J. Appl. Phys., 70, 6883 (1991). 10.1063/1.349812
7.
A. B. Alles, R. Puskas, G. Callahan and V. L. Burdick, J. Am. Ceram. Soc., 76, 2098 (1993). 10.1111/j.1151-2916.1993.tb08339.x
8.
Y.-S. Lee, K.-S. Liao and T.-Y. Tseng, J. Am. Ceram. Soc., 79, 2379 (1996). 10.1111/j.1151-2916.1996.tb08986.x
9.
C.-W. Nahm, Mater. Lett., 47, 182 (2001). 10.1016/S0167-577X(00)00262-7
10.
C.-W. Nahm, Mater. Lett., 57, 1371 (2003).
11.
C.-W. Nahm, Ceram. Int., 30, 1009 (2004). 10.1016/j.ceramint.2003.10.020
12.
C.-W. Nahm, Mater. Lett., 58, 2097 (2005). 10.1016/j.matlet.2005.01.080
13.
C.-W. Nahm, J. Mater. Sci., 43, 2857 (2008). 10.1007/s10853-007-2263-9
14.
C.-W. Nahm, J. Mater. Sci.: Mater. Electron., 20, 718 (2009). 10.1007/s10854-008-9793-z
15.
C.-W. Nahm, J. Rare Earth, 31, 276 (2013). 10.1016/S1002-0721(12)60272-5
16.
J. C. Wurst and J. A. Nelson, J. Am. Ceram. Soc., 55, 109 (1972). 10.1111/j.1151-2916.1972.tb11224.x
17.
M. Mukae, K. Tsuda and I. Nagasawa, J. Appl. Phys., 50, 4475 (1979). 10.1063/1.326411
18.
L. Hozer, Semiconductor Ceramics: Grain Boundary Effects, p.22, Ellis Horwood, London (1999).
19.
C.-W. Nahm, J. Rare Earth, 33, 403 (2015). 10.1016/S1002-0721(14)60433-6
20.
C.-W. Nahm, C.-H. Park, J. Mater. Sci., 35, 3037 (2000). 10.1023/A:1004749214640
21.
G. D. Mahan, J. Appl. Phys., 54, 3825 (1983). 10.1063/1.332607
Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 31
  • No :10
  • Pages :539-545
  • Received Date : 2021-08-29
  • Revised Date : 2021-10-04
  • Accepted Date : 2021-10-05
  • DOI :https://doi.org/10.3740/MRSK.2021.31.10.539
Journal Informaiton Korean Journal of Materials Research Korean Journal of Materials Research
Online Submission
  • scopus
  • NRF
  • KOFST
  • crossref crossmark
  • crossref cited-by
  • crosscheck
  • open access
  • ccl
Journal Informaiton Journal Informaiton - close