All Issue

2020 Vol.30, Issue 8 Preview Page
ITO-Ag NW based Transparent Quantum Dot Light Emitting Diode

ITO-Ag NW기반 투명 양자점 발광 다이오드

Taewook Kang1
,
Hyojun Kim2
,
Yongseok Jeong2
,
Jongsu Kim12†
강 태욱1
,
김 효준2
,
정 용석2
,
김 종수12†
1Interdisciplinary Program of LED and Solid State Lighting Engineering, Pukyong National University, Busan 48513, Republic of Korea
2Department of Display Science and Engineering, Pukyong National University, Busan 48513, Republic of Korea
1부경대학교 LED 공학협동과정
2부경대학교 융합디스플레이공학과
†Corresponding author E-Mail : jsukim@pknu.ac.kr (J. Kim, Pukyong National Univ.)
August 2020. pp. 421-425
PDF XML Citation
Abstract

A transparent quantum dot (QD)-based light-emitting diode (LED) with silver nanowire (Ag NW) and indium-tin oxide (ITO) hybrid electrode is demonstrated. The device consists of an Ag NW-ITO hybrid cathode (-), zinc oxide, poly (9- vinylcarbazole) (PVK), CdSe/CdZnS QD, tungsten trioxide, and ITO anode (+). The device shows pure green-color emission peaking at 548 nm, with a narrow spectral half width of 43 nm. Devices with hybrid cathodes show better performances, including higher luminance with higher current density, and lower threshold voltage of 5 V, compared with the reference device with a pure Ag NW cathode. It is worth noting that our transparent device with hybrid cathode exhibits a lifetime 9,300 seconds longer than that of a device with Ag NW cathode. This is the reason that the ITO overlayer can protect against oxidization of Ag NW, and the Ag NW underlayer can reduce the junction resistance and spread the current efficiently. The hybrid cathode for our transparent QD LED can applicable to other quantum structure-based optical devices.

Keywords
quantum dot
CdSe/CdZnS
light-emitting diode
silver nanowire
ITO electrode
References
1.
R. S. Deshpande, V. Bulovic and S. R. Forrest, Appl. Phys. Lett., 75, 888 (1999). 10.1063/1.124250
2.
J. H. Wendorff, T. Christ, B. Gliisen, A. Greiner, A. Kettner, R. Sander, V. Stumpflen and V. V. Tsukruk, Adv. Mater., 9, 49 (1997). 10.1002/adma.19970090110
3.
W. Lu, I. Kamiya, M. Ichida and H. Ando, Appl. Phys. Lett., 95, 083102 (2009). 10.1063/1.3213349
4.
D. Bera, L. Qian, T. K. Tseng and P. H. Holloway, Materials, 3, 2260 (2010). 10.3390/ma3042260PMC5445848
5.
Y. Yang, C. Zhang, X. Qu, W. Zhang, M. Marus, B. Xu, K. Wang and X. W. Sun, IEEE Trans. Nanotechnol., 18, 220 (2019). 10.1109/TNANO.2019.2891242
6.
Q. Chen, Y. Yan, X. Wu, X. Wang, G. Zhang, J. Chen, H. Chen and T. Guo, J. Mater. Chem. C, 8, 1280 (2020). 10.1039/C9TC06088J
7.
D. Chirvase, Z. Chiguvare, M. Knipper, J. Parisi, V. Dyakonov and J. C. Hummelen, J. Appl. Phys., 93, 3376 (2003). 10.1063/1.1545162
8.
E. Kim, Y. Xia and G. M. Whitesides, Nature, 376, 581 (1995). 10.1038/376581a0
9.
A. W. Adamson and A. P. Gast, Physical Chemistry of Surfaces, 6th ed., Chap. 1, John Wiley & Son, New York (1997)
10.
P. O. Anikeeva, J. E. Halpert, M. G. Bawendi and V. Bulovic, Nano Lett., 9, 2532 (2009). 10.1021/nl900296919514711
11.
K. H. Ok, J. W. Kim, S. R. Park, Y. M. Kim, C. J. Lee, S. J. Hong, M. G. Kwak, N. Kim, C. J. Han and J. W. Kim, Sci. Rep., 5, 9464 (2015). 10.1038/srep0946425824143PMC4379502
12.
S. Y. Kim, J. L. Lee, K. B. Kim and Y. H. Tak, J. Appl. Phys., 95, 2560 (2004). 10.1063/1.1635995
13.
C. C. Wu, C. I. Wu, J. C. Sturm and A. Kahn, Appl. Phys. Lett., 70, 1348 (1997). 10.1063/1.118575
Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 30
  • No :8
  • Pages :421-425
  • Received Date : 2020-06-18
  • Revised Date : 2020-07-29
  • Accepted Date : 2020-07-29
  • DOI :https://doi.org/10.3740/MRSK.2020.30.8.421
Journal Informaiton Korean Journal of Materials Research Korean Journal of Materials Research
Online Submission
  • scopus
  • NRF
  • KOFST
  • crossref crossmark
  • crossref cited-by
  • crosscheck
  • open access
  • ccl
Journal Informaiton Journal Informaiton - close