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2019 Vol.29, Issue 9 Preview Page
Growth of Aluminum Nitride Thin Films by Atomic Layer Deposition and Their Applications: A Review

원자층 증착법을 이용한 AlN 박막의 성장 및 응용 동향

Hee Ju Yun1
,
Hogyoung Kim2
,
Byung Joon Choi1†
윤 희주1
,
김 호경2
,
최 병준1†
1Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
2Department of Visual Optics, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
1서울과학기술대학교 신소재공학과
2서울과학기술대학교 안경광학과
†Corresponding author E-Mail : bjchoi@seoultech.ac.kr (B. J. Choi, Seoultech.)
September 2019. pp. 567-577
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Abstract

Aluminum nitride (AlN) has versatile and intriguing properties, such as wide direct bandgap, high thermal conductivity, good thermal and chemical stability, and various functionalities. Due to these properties, AlN thin films have been applied in various fields. However, AlN thin films are usually deposited by high temperature processes like chemical vapor deposition. To further enlarge the application of AlN films, atomic layer deposition (ALD) has been studied as a method of AlN thin film deposition at low temperature. In this mini review paper, we summarize the results of recent studies on AlN film grown by thermal and plasma enhanced ALD in terms of processing temperature, precursor type, reactant gas, and plasma source. Thermal ALD can grow AlN thin films at a wafer temperature of 150~550 °C with alkyl/amine or chloride precursors. Due to the low reactivity with NH3 reactant gas, relatively high growth temperature and narrow window are reported. On the other hand, PEALD has an advantage of low temperature process, while crystallinity and defect level in the film are dependent on the plasma source. Lastly, we also introduce examples of application of ALD-grown AlN films in electronics.

Keywords
AlN film
thermal atomic layer deposition
plasma enhanced atomic layer deposition
nitride electronics
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 29
  • No :9
  • Pages :567-577
  • Received Date : 2019-08-28
  • Revised Date : 2019-09-05
  • Accepted Date : 2019-09-06
  • DOI :https://doi.org/10.3740/MRSK.2019.29.9.567
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