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2019 Vol.29, Issue 8
Comparative Investigation of Interfacial Characteristics between HfO2/Al2O3 and Al2O3/HfO2 Dielectrics on AlN/p-Ge Structure
Hogyoung Kim1†
,
Hee Ju Yun2
,
Seok Choi2
,
Byung Joon Choi2
1Department of Visual Optics, Seoul National University of Science and Technology (Seoultech), Seoul 01811, Republic of Korea
2Departmet of Materials Science and Engineering, Seoul National University of Science and Technology (Seoultech), Seoul 01811, Republic of Korea
†Corresponding author E-Mail : hogyoungkim@gmail.com (H. Kim, Seoultech)
August 2019. pp. 463-468
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Abstract

The electrical and interfacial properties of HfO2/Al2O3 and Al2O3/HfO2 dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance–voltage(C–V) and current–voltage(I–V) measurements. In the C–V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the HfO2/Al2O3 sample. Higher frequency dispersion in the inversion region is observed for the Al2O3/HfO2 sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the Al2O3/HfO2 sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the Al2O3/HfO2 sample, which are not observed for the Al2O3/HfO2 sample. I–V measurements show a reduction of leakage current of about three orders of magnitude for the HfO2/Al2O3 sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the HfO2/Al2O3 sample. Based on these results, it is suggested that HfO2/Al2O3 is a better dielectric stack than Al2O3/HfO2 on AlN/p-Ge interface.

Keywords
HfO2/Al2O3
mid-gap states
leakage current
References
1.
P. Lim, D. Chi, X. Wang and Y. Yeo, Appl. Phys. Lett., 101, 172103 (2012).10.1063/1.4762003
2.
K. Prabhakaran, F. Maeda, Y. Watanabe and T. Ogino, Appl. Phys. Lett., 76, 2244 (2000).10.1063/1.126309
3.
F. Bin, L. Xia, F. Xi, M. Fei, F. Jiao and H. Yue, Chin. Phys. B, 22, 037702 (2013).10.1088/1674-1056/22/3/037702
4.
Y. Seo, C. Kim, T. Lee, W. Hwang, H. Yu, Y. Choi and B. Cho, IEEE Trans. Electron Dev., 64, 3998 (2017).10.1109/TED.2017.2741496
5.
Q. Xie, S. Deng, M. Schaekers, D. Lin, M. Caymax, A. Delabie, X. Qu, Y. Jiang, D. Deduytsche and C. Detavernier, Semicond. Sci. Technol., 27, 074012 (2012).10.1088/0268-1242/27/7/074012
6.
Y. Fukuda, T. Ueno, S. Hirono and S. Hashimoto, Jpn. J. Appl. Phys., 44, 6981 (2005).10.1143/JJAP.44.6981
7.
M. Perego, G. Scarel, M. Fanciulli, I. Fedushkin and A. Skatova, Appl. Phys. Lett., 90, 162115 (2007).10.1063/1.2723684
8.
D. Kuzum, T. Krishnamohan, A. Nainani, Y. Sun, P. Pianetta, H. Wong and K. Saraswat, IEEE Trans. Electron Dev., 58, 59 (2011).10.1109/TED.2010.2088124
9.
R. Zhang, P.-C. Huang, J.-C. Lin, N. Taoka, M. Takenaka and S. Takagi, IEEE Trans. Electron Dev., 60, 927 (2013).10.1109/TED.2013.2238942
10.
D. Kuzum, T. Krishnamohan, A. Pethe, A. Okyay, Y. Oshima, Y. Sun, J. McVittie, P. Pianetta, P. McIntyre and K. Saraswat, IEEE Electron Dev. Lett., 29, 328 (2008).10.1109/LED.2008.918272
11.
H. Li, L. Lin and J. Robertson, Appl. Phys. Lett., 101, 052903 (2012).10.1063/1.4742166
12.
H. Li, Y. Guo and J. Robertson, Microelectron. Eng., 147, 168 (2015).10.1016/j.mee.2015.04.081
13.
R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka and S. Takagi, J. Electrochem. Soc., 158, G178 (2011).10.1149/1.3599065
14.
H. Kim, P. McIntyre, C. Chui, K. Saraswat and M. Cho, Appl. Phys. Lett., 85, 2902 (2004).10.1063/1.1797564
15.
X. Li, Y. Cao, A. Li, H. Li and D. Wu, ECS Solid State Lett., 1, N10 (2012).10.1149/2.006202ssl
16.
I. Krylov, L. Kornblum, A. Gavrilov, D. Ritter and M. Eizenberg, Appl. Phys. Lett., 100, 173508 (2012).10.1063/1.4704925
17.
D. Misra, Electrochem. Soc. Inter nface, 20, 47 (2011).10.1149/2.F05114if
18.
M. Usman, C. Henkel and A. Hall´en, ECS J. Solid State Sci. Technol., 2, N3087 (2013).10.1149/2.013308jss
19.
G. Wilk, M. Green, M. Ho, B. Busch, T. Sorsch, F. Klemens, B. Brijs, R. van Dover, A. Kornblit, T. Gustafsson, E. Garfunkel, S. Hillenius, D. Monroe, P. Kalavade and M. Hergenrother, Tech. Dig. VLSI Symp., p. 88 (2002).
20.
J. Kerr, Strengths of Chemical bonds, in CRC Handbook of Chemistry and Physics, p. 9-54, ed. D. R. Lide, CRC Press, Boca Raton, FL (2005).
21.
R. Engel-Herbert, Y. Hwang and S. Stemmer, J. Appl. Phys., 108, 124101 (2010).10.1063/1.3520431
22.
F. Bellenger, M. Houssa, A. Delabie, V. Afanasiev, T. Conard, M. Caymax, M. Meuris, K. Meyer and M. Heyns, J. Electrochem. Soc., 155, G33 (2008).10.1149/1.2819626
23.
Y. Choi, H. Lim, S. Lee, S. Suh, J. Kim, H. Jung, S. Park, J. Lee, S. Kim, C. Hwang and H. Kim, ACS. Appl, Mater. Interfaces, 4, 7885 (2014)10.1021/am501217224780393
24.
H. Seo, F. Bellenger, K. Chung, M. Houssa, M. Meuris, M. Heyns and G. Lucovsky, J. Appl. Phys., 106, 044909 (2009).10.1063/1.3204026
25.
Y. Yuan, L. Wang, B. Yu, B. Shin, J. Ahn, P. McIntyre, P. Asbeck, M. Rodwell and Y. Taur, IEEE Electron Dev. Lett., 32, 485 (2011).10.1109/LED.2011.2105241
26.
D. Schroder, Semiconductor Material and Device Characterization, p. 1, Wiley, New York, USA (2005).10.1002/0471749095
27.
S. Gupta, E. Simoen, R. Loo, O. Madia, D. Lin, C. Merckling, Y. Shimura, T. Conard, J. Lauwaert, H. Vrielinck and M. Heyns, ACS Appl. Mater. Interfaces, 8, 13181 (2016).10.1021/acsami.6b0158227172051
28.
D. Wang, S. Kojima, K. Sakamoto, K. Yamamoto and H. Nakashima, J. Appl. Phys., 112, 083707 (2012).10.1063/1.4759139
29.
G. He, L. Zhang, G. Meng, G. Li, Q. Fang and J. Zhang, J. Appl. Phys., 102, 094103 (2007).10.1063/1.2802994
30.
F. Tian and E. Chor, J. Electrochem. Soc., 157, H557 (2010).10.1149/1.3353799
31.
E. Miyazaki, Y. Goda, S. Kishimoto and T. Mizutani, Solid-State Electron., 62, 152 (2011).10.1016/j.sse.2011.04.017
32.
J. Robertson and B. Falabretti, J. Appl. Phys., 100, 014111 (2006).10.1063/1.2213170
33.
D. Deen, S. Binari, D. Storm, D. Katzer, J. Roussos, J. Hackley and T. Gougousi, Electron. Lett., 45, 423 (2009).10.1049/el.2009.3688
34.
G. Dutta, N. DasGupta and A. DasGupta, IEEE Trans. Electron Dev., 64, 3609 (2017).10.1109/TED.2017.2723932
Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 29
  • No :8
  • Pages :463-468
  • Received Date : 2019-06-17
  • Revised Date : 2019-07-12
  • Accepted Date : 2019-08-06
  • DOI :https://doi.org/10.3740/MRSK.2019.29.8.463
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