Heterojunction Solar Cell with Carrier Selective Contact Using MoOx Deposited by Atomic Layer Deposition

Min Ji Jeong; Young Joon Jo; Sun Hwa Lee; Joon Shin Lee; Kyung Jin Im; Jeong Ho Seo; Hyo Sik Chang

doi:10.3740/MRSK.2019.29.5.322

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2019 Vol.29, Issue 5 Preview Page Next Page

Heterojunction Solar Cell with Carrier Selective Contact Using MoO_x Deposited by Atomic Layer Deposition 원자층 증착법으로 증착된 MoO_x를 적용한 전하 선택 접합의 이종 접합 태양전지

May 2019. pp. 322-327

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Abstract

Hole carrier selective MoO_x film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[Mo(CO)₆] as precursor and ozone(O₃) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoO_x film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the Mo⁶⁺ state is dominant in the MoO_x thin film. In the case of ALD-MoO_x grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from 576 °C to 620 °C at 250 g/Nm after post-deposition annealing at 350 °C in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoO_x films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

Keywords

atomic layer deposition

carrier selective contact

heterojunction

MoO_x

silicon solar cell

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Information

Publisher :Materials Research Society of Korea
Publisher(Ko) :한국재료학회
Journal Title :Korean Journal of Materials Research
Journal Title(Ko) :한국재료학회지
Volume : 29
No :5
Pages :322-327
Received Date : 2019-03-29
Revised Date : 2019-04-25
Accepted Date : 2019-04-25
DOI :https://doi.org/10.3740/MRSK.2019.29.5.322

Korean Journal of Materials Research ISSN:1225-0562(Print) 2287-7258(Online) 한국재료학회지

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