High Performance Thin-Film Transistors Based on Zinc Oxynitride Semiconductors: Experimental and First-Principles Studies

Yang-Soo Kim; Jong Heon Kim; Hyun-Suk Kim

doi:10.3740/MRSK.2016.26.1.42

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High Performance Thin-Film Transistors Based on Zinc Oxynitride Semiconductors: Experimental and First-Principles Studies

January 2016. pp. 42-46

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Abstract

The properties of zinc oxynitride semiconductors and their associated thin film transistors are studied. Reactively sputtered zinc oxynitride films exhibit n-type conduction, and nitrogen-rich compositions result in relatively high electron mobility. Nitrogen vacancies are anticipated to act as shallow electron donors, as their calculated formation energy is lowest among the possible types of point defects. The carrier density can be reduced by substituting zinc with metals such as gallium or aluminum, which form stronger bonds with nitrogen than zinc does. The electrical properties of gallium-doped zinc oxynitride thin films and their respective devices demonstrate the carrier suppression effect accordingly.

Keywords

zinc oxynitride

thin-film transistor

field-effect mobility

flat panel displays

first-principles calculation

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Information

Publisher :Materials Research Society of Korea
Publisher(Ko) :한국재료학회
Journal Title :Korean Journal of Materials Research
Journal Title(Ko) :한국재료학회지
Volume : 26
No :1
Pages :42-46
Received Date : 2015-11-04
Revised Date : 2015-12-15
Accepted Date : 2015-12-22
DOI :https://doi.org/10.3740/MRSK.2016.26.1.42

Korean Journal of Materials Research ISSN:1225-0562(Print) 2287-7258(Online) 한국재료학회지

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