Thermal Property Evaluation of a Silicon Nitride Thin-Film Using the Dual-Wavelength Pump-Probe Technique

Yun Young Kim

doi:10.3740/MRSK.2019.29.9.547

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2019 Vol.29, Issue 9 Preview Page Next Page

Thermal Property Evaluation of a Silicon Nitride Thin-Film Using the Dual-Wavelength Pump-Probe Technique 2파장 펌프-프로브 기법을 이용한 질화규소 박막의 열물성 평가

September 2019. pp. 547-552

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Abstract

In the present study, the thermal conductivity of a silicon nitride(Si₃N₄) thin-film is evaluated using the dualwavelength pump-probe technique. A 100-nm thick Si₃N₄ film is deposited on a silicon (100) wafer using the radio frequency plasma enhanced chemical vapor deposition technique and film structural characteristics are observed using the X-ray reflectivity technique. The film’s thermal conductivity is measured using a pump-probe setup powered by a femtosecond laser system of which pump-beam wavelength is frequency-doubled using a beta barium borate crystal. A multilayer transient heat conduction equation is numerically solved to quantify the film property. A finite difference method based on the Crank-Nicolson scheme is employed for the computation so that the experimental data can be curve-fitted. Results show that the thermal conductivity value of the film is lower than that of its bulk status by an order of magnitude. This investigation offers an effective way to evaluate thermophysical properties of nanoscale ceramic and dielectric materials with high temporal and spatial resolutions.

Keywords

silicon nitride

thin-film

thermal conductivity

femtosecond laser

pump-probe technique

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Information

Publisher :Materials Research Society of Korea
Publisher(Ko) :한국재료학회
Journal Title :Korean Journal of Materials Research
Journal Title(Ko) :한국재료학회지
Volume : 29
No :9
Pages :547-552
Received Date : 2019-06-24
Revised Date : 2019-08-21
Accepted Date : 2019-08-22
DOI :https://doi.org/10.3740/MRSK.2019.29.9.547

Korean Journal of Materials Research ISSN:1225-0562(Print) 2287-7258(Online) 한국재료학회지

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