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2016 Vol.26, Issue 9
Gap-Fill Characteristics and Film Properties of DMDMOS Fabricated by an F-CVD System
Woojin Lee1
,
Atsuki Fukazawa2
,
Yong-Ho Choa3†
1Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD, Samsungjeonja-ro 1, Hwaseong, Gyeonggi-do 18448, Republic of Korea
2ASM Japan K.K., R&D Process Development, 23-1, 6-chome, Nagayama, Tama-shi, Tokyo 206-0025, Japan
3Functional Nano-Materials Research Lab, Department of Chemical Engineering, Hanyang University, 55 Hanyangdaehak-ro, Sangrok-gu, Ansan, Gyeonggi-do 15588, Republic of Korea
†Corresponding author choa15@hanyang.ac.kr (Y.-H. Choa, Hanyang Univ.)
September 2016. pp. 455-459
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Abstract

The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, (CH3)2Si(OCH3)2, and CxHyOz by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of sub-micrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.

Keywords
gap fill
f-cvd
low-k
trench pattern
microelectronic.
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 26
  • No :9
  • Pages :455-459
  • Received Date : 2016-07-01
  • Revised Date : 2016-07-14
  • Accepted Date : 2016-07-14
  • DOI :https://doi.org/10.3740/MRSK.2016.26.9.455
Journal Informaiton Korean Journal of Materials Research Korean Journal of Materials Research
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