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2022 Vol.32, Issue 9 Preview Page
Electrical Properties of TiN/TiO2/FTO Resistive Random-Access Memory Based on Peroxo Titanium Complex Sol Solution by Heat Treatment

열처리에 따른 Peroxo Titanium Complex 졸 용액 기반 TiN/TiO2/ FTO Resistive Random-Access Memory의 전기적 특성

Hyeonmin Yim*
,
Jinho Lee*
,
Won Jin Kim
,
Seung-Hwan Oh
,
Dong Hyeok Seo
,
Donghee Lee
,
Ryun Na Kim
,
Woo-Byoung Kim†
임 현민*
,
이 진호*
,
김 원진
,
오 승환
,
서 동혁
,
이 동희
,
김 륜나
,
김 우병†
Department of Energy Engineering, Dankook University, Cheonan 31116, Republic of Korea
단국대학교 에너지공학과
†Corresponding author E-Mail : woo7838@dankook.ac.kr (W.-B. Kim, Dankook Univ.)

*These two authors are equally contributed as first authors.

September 2022. pp. 384-390
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Abstract

A spin coating process for RRAM, which is a TiN/TiO2/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (VO), a major factor of the conductive filament. It was carried out at 100 °C under moisture removal conditions and at 300 °C and 500 °C for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti3+ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 °C showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 104. The double-logarithmic plot of the I-V curve confirmed the device at 100 °C required a low operating voltage. As a result, the 100 °C heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO2/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

Keywords
peroxo titanium complex
resistive random-access memory
oxygen vacancy
conductive filament
oxide RAM
References
1.
Y.-B. Kim, Trans. Electrical and Electron. Mater., 11, 93 (2010). 10.4313/TEEM.2010.11.3.093
2.
M. M. Rehman, H. M. M. U. Rehman, J. Z. Gul, W. Y. Kim, K. S. Karimov and N. Ahmed, Sci. Technol. Adv. Mater., 21, 147 (2020). 10.1080/14686996.2020.173023632284767PMC7144203
3.
L. Wang and S. Gai, Contemporary Phys., 55, 75 (2014). 10.1080/00107514.2013.878565
4.
G. Khurana, P. Misra and R. S. Katiyar, J. Appl. Phys., 114, 124508 (2013). 10.1063/1.4823734
5.
T. Kim, D.-K. Kim, J. Kim and J. J. Pak, Semicond. Sci. Technol., 34, 065006 (2019). 10.1088/1361-6641/ab1403
6.
K. M. Kim, D. S. Jeong and C. S. Hwang, Nanotechnology, 22, 254002 (2011). 10.1088/0957-4484/22/25/25400221572206
7.
R. Waser and M. Aono, Nanoscience and Technology: A Collection of Reviews from Nature Journals, p.158, World Scientific (2010).
8.
Y. Dai, Y. Zhao, J. Wang, J. Xu and F. Yang, AIP Advances, 5, 017133 (2015). 10.1063/1.4906792
9.
Z. Shen, Y. Qi, I. Z. Mitrovic, C. Zhao, S. Hall, L. Yang, T. Luo, Y. Huang and C. Zhao, Micromachines, 10, 446 (2019). 10.3390/mi1007044631269730PMC6680579
10.
M. S. S. Danish, A. Bhattacharya, D. Stepanova, A. Mikhaylov, M. L. Grilli, M. Khosravy and T. Senjyu, Metals, 10, 1604 (2020). 10.3390/met10121604
11.
S.-S. Park, J. Korean Ceram. Soc., 49, 642 (2012). 10.4191/kcers.2012.49.6.642
12.
Gyanan, S. Mondal and A. Kumar, AIP Conference Proceedings, 1832, 080075 (2017). 10.1063/1.4980535
13.
D.-H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X.-S. Li, G.-S. Park, B. Lee and S. Han, Nat. Nanotechnol., 5, 148 (2010). 10.1038/nnano.2009.45620081847
14.
A. Gschwandtner, Mater. Sci. Forum, 573, 181 (2008). 10.4028/www.scientific.net/MSF.573-574.181
15.
J. Lee, R. N. Kim, K.-R. Park and W.-B. Kim, Appl. Surf. Sci., 562, 150170 (2021). 10.1016/j.apsusc.2021.150170
16.
K. Wang, Y. Chang, L. Lv and Y. Long, Appl. Surf. Sci., 351, 164 (2015). 10.1016/j.apsusc.2015.05.122
17.
B. Shirke, P. Korake, P. Hankare, S. Bamane and K. Garadkar, J. Mater. Sci.: Mater. Electron., 22, 821 (2011). 10.1007/s10854-010-0218-4
18.
J. Chen, H. Zheng, Y. Zhao, M. Que, X. Lei, K. Zhang and Y. Luo, J. Phys. Chem. Solids, 145, 109565 (2020). 10.1016/j.jpcs.2020.109565
19.
W.-K. Wang, J.-J. Chen, X. Zhang, Y.-X. Huang, W.-W. Li and H.-Q. Yu, Sci. Rep., 6, 1 (2016). 10.1038/s41598-016-0001-828442746PMC5431369
20.
V. Natu, M. Benchakar, C. Canaff, A. Habrioux, S. Celerier and M. W. Barsoum, Matter, 4, 1224 (2021). 10.1016/j.matt.2021.01.015
21.
M. Ishfaq, M. R. Khan, M. Bhopal, F. Nasim, A. Ali, A. Bhatti, I. Ahmed, S. Bhardwaj and C. Cepek, J. Appl. Phys., 115, 174506 (2014). 10.1063/1.4874942
22.
A. Bricalli, E. Ambrosi, M. Laudato, M. Maestro, R. Rodriguez and D. Ielmini, 2016 IEEE International Electron Devices Meeting (IEDM), 4.3., 1 (2016).
23.
Y.-S. Lin, Y.-W. Lain and S. S. Hsu, IEEE Electron Device Letters, 31, 102 (2009). 10.1109/LED.2009.2036576
24.
M. N. Awais and K. H. Choi, Electron. Mater. Lett., 10, 601 (2014). 10.1007/s13391-014-3149-z
25.
Y. S. S h in, K. L ee, Y. R . Kim, H . Lee, I . M. L ee, W. T. Kang, B. H. Lee, K. Kim, J. Heo and S. Park, Adv. Mater., 30, 1704435 (2018). 10.1002/adma.20170443529333683
26.
Y. Chen, L. Chen, G. Lian and G. Xiong, J. Appl. Phys., 106, 023708 (2009). 10.1063/1.3176491
Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 32
  • No :9
  • Pages :384-390
  • Received Date : 2022-08-24
  • Revised Date : 2022-09-13
  • Accepted Date : 2022-09-14
  • DOI :https://doi.org/10.3740/MRSK.2022.32.9.384
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