All Issue

2016 Vol.26, Issue 11 Preview Page
Facile Fabrication Process for Graphene Nanoribbon Using Nano-Imprint Lithography(NIL) and Application of Graphene Pattern on Flexible Substrate by Transfer Printing of Silicon Membrane

나노임프린트 리소그래피 기술을 이용한 그래핀 나노리본 트랜지스터 제조 및 그래핀 전극을 활용한 실리콘 트랜지스터 응용

Seong Un Eom
,
Seok Hee Kang
,
Suck Won Hong†
엄 성운
,
강 석희
,
홍 석원†
Department of Congno-Mechatronics Engineering, Pusan National University, Busan 46241, Republic of Korea
부산대학교 인지메카트로닉스공학과
†Corresponding author : swhong@pusan.ac.kr (S. W. Hong, Pusan Nat’l Univ.)
November 2016. pp. 635-643
PDF XML Citation
Abstract

Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped Si/SiO2 substrate. Consequently, we observed an enhancement of the performance of the GNRtransistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.

Keywords
nanoimprint lithography
graphene
nanoribbon
transistor.
References
1
ITRS, “International technology roadmap for semiconductors, LITHOGRAPHY” (2003)
2
N H E Weste and K Eshraghian, Principles of CMOS Design, Addison Wesley. (1993)
3
S Y Chou, P R Krauss and P J Renstrom, Appl. Phys. Lett, 67; 3114 (1995)
10.1063/1.114851
4
S Y Chou, P R Krauss and P J Renstrom, J. Vac. Sci. Technol. B, 14; 4129 (1996)
ttps://doi.org/10.1116/1.588605
5
M Colburn, S Johnson, M Stewart, S Damle, T Bailey, B Choi, M Wedlake, T Michaelson, S V Sreenvasan, J Ekertdt and C G Willson, Proc. SPIE-Int. Soc. Opt. Eng, 3679; 379 (1999)
6
S Y Chou, P R Krauss and P J Renstrom, J. Vac. Sci. Technol. B, 14; 4129, (1996)
10.1116/1.588605
7
M D Stewart, S C Johnson, S V Sreenivasan, D J Resnick and D J Willson, J. Microlith. Microfab. Microsyst, 4; 011002 (2005)
8
S Y Chou, P R Krauss and P J Renstrom, Appl. Phys. Lett, 67; 3114 (1995)
10.1063/1.114851
9
W Zhang and S Y Chou, Appl. Phys. Lett, 83; 1632 (2003)
10.1063/1.1600505
10
S Y Chou, P R Krauss and P J Renstrom, Science, 272; 85 (1996)
10.1126/science.272.5258.85
11
K S Novoselov, A K Geim, S V Morozov, D Jiang, Y Zhang, S V Dubonos, I V Grigorieva and A A Firsov, Science, 306; 666 (2004)
10.1126/science.110289615499015
12
A K Geim and K S Novoselov, Nature Mater, 6; 183 (2007)
10.1038/nmat184917330084
13
K S Novoselov, A K Geim, S V Morozov, D Jiang, M I Katsnelson, I V Grigorieva, S V Dubonos and A A Firsov, Nature, 438; 197 (2005)
10.1038/nature0423316281030
14
Y Zhang, Y W Tan, H L Stormer and P Kim, Nature, 438; 201 (2005)
10.1038/nature0423516281031
15
K I Bolotin, K J Sikes, Z Jiang, M Klima, G Fudenberg, J Hone, P Kim and H L Stormer, Solid State Commun, 146; 351 (2008)
10.1016/j.ssc.2008.02.024
16
S V Morozov, K S Novoselov, M I Katsnelson, F Schedin, D C Elias, J A Jaszczak and A K Geim, Phys. Rev. Lett, 100; 016602 (2008)
10.1103/PhysRevLett.100.01660218232798
17
A A Balandin, S Ghosh, W Bao, I Calizo, D Teweldebrhan, F Miao and C N Lau, Nano Lett, 8; 902 (2008)
10.1021/nl073187218284217
18
C Lee, X Wei, J W Kysar and J Hone, Science, 321; 385 (2008)
10.1126/science.115799618635798
19
R R Nair, P Blake, A N Grigorenko, K S Novoselov, T J Booth, T Stauber, N M R Peres and A K Geim, Science, 320; 1308 (2008)
10.1126/science.115696518388259
20
M Y Han, B Ozyilmaz, Y B Zhang and P Kim, Phys. Rev. Lett, 98; 206805 (2007)
10.1103/PhysRevLett.98.20680517677729
21
X Wang, Y Ouyang, X Li, H Wang, J Guo and H Dai, Phys. Rev. Lett, 100; 20 (2008)
22
L Jiao, L Ding Zhang, Liu J L. and H Dai, Nano Res, 3; 6 (2010)
23
X Li, X Wang, L Zhang, S W Lee and H Dai, Science, 319; 5867 (2008)
24
S H Kang, W S Hwang, Z Lin, S-H Kwon and S W Hong, Nano Lett, 15; 7913 (2015)
10.1021/acs.nanolett.5b0294626569342
25
K S Kim, Y Zhao, H Jang, S Y Lee, J M Kim, K S Kim, J-H Ahn, P Kim, J-Y Choi and B H Hong, Nature, 457; 706. (2009)
10.1038/nature0771919145232
26
A Reina, X Jia, J Ho, D Nezich, H Son, V Bulovic, M S Dresselhaus and J Kong, Nano Lett, 9; 30 (2009)
10.1021/nl801827v19046078
27
M Y Han, B Özyilmaz, Y Zhang and P Kim, Phys. Rev. Lett, 98; 206805 (2007)
10.1103/PhysRevLett.98.20680517677729
28
H-S Kim, S M Won, Y-G Ha, J-H Ahn, A Facchetti, T J Marks and J A Rogers, Appl. Phys. Lett, 95; 183504 (2009)
10.1063/1.3256223
29
S W Hong, F Du, W Lan, S Kim, H-S Kim and J A Rogers, Adv. Mater, 23; 3821 (2011)
Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 26
  • No :11
  • Pages :635-643
  • Received Date : 2016-07-30
  • Revised Date : 2016-10-17
  • Accepted Date : 2016-10-18
  • DOI :https://doi.org/10.3740/MRSK.2016.26.11.635
Journal Informaiton Korean Journal of Materials Research Korean Journal of Materials Research
Online Submission
  • scopus
  • NRF
  • KOFST
  • crossref crossmark
  • crossref cited-by
  • crosscheck
  • open access
  • ccl
Journal Informaiton Journal Informaiton - close