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2025 Vol.35, Issue 11

Review

Cu Filling into Seed and Seedless Layered Through-Silicon-Via and Hybrid Bonding for High-Density Semiconductor Packaging

고집적 반도체 패키징을 위한 Seed 및 Seedless층 TSV의 Cu 충전 및 하이브리드 본딩

Chae Yeon Lim1
,
Shin Hui Seon1
,
Hyun-Sik Kim1†
,
Jae Pil Jung1
임 채연1
,
선 신희1
,
김 현식1†
,
정 재필1
1Department of Materials Science and Engineering, University of Seoul, Seoul 02504, Republic of Korea
1서울시립대학교 신소재공학과
†Corresponding author E-Mail : hyunsik.kim@uos.ac.kr (H.-S. Kim, UOS)
27 November 2025. pp. 511-522
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Abstract

Through-silicon via (TSV) filling is indispensable for three-dimensional semiconductor packaging. Conventional processes rely on PVD (physical vapor deposition) or ALD (atomic layer deposition) seed layer deposition followed by copper electroplating, but these approaches face limitations in productivity and conformality. ALD and ELD (electroless deposition) have been investigated as seed-based approaches to overcome poor step coverage, while seedless strategies have also been proposed including additive-assisted electroplating, electroless alloy layers, metallic nanowires, and conductive pastes. These methods have demonstrated void-free or seam-free fills under specific conditions, yet challenges remain in achieving uniform superconformal filling across dense arrays, suppressing copper oxidation and interfacial contamination during rinsing/drying, and guaranteeing long-term reliability under thermomechanical cycling, electromigration, and humidity bias. In parallel, hybrid bonding has emerged as an alternative to thermo-compression bonding, where TSV filling performance, CMP (chemical mechanical polishing) planarization, and interface activation are crucial to reliable bonding. An integrated research approach incorporating both seed- and seedless-based TSV filling together with hybrid bonding provides a credible pathway to reliable three-dimensional stacking for high-bandwidth memory and artificial intelligence applications.

Keywords
through-silicon-via
seedless copper filling
hybrid bonding
high-bandwidth memory
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 35
  • No :11
  • Pages :511-522
  • Received Date : 2025-09-24
  • Revised Date : 2025-10-29
  • Accepted Date : 2025-10-30
  • DOI :https://doi.org/10.3740/MRSK.2025.35.11.511
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