Characterization of n-type In3Sb1Te2 and p-type Ge2Sb2Te5 Thin Films for Thermoelectric Generators

So-Hyeon Kang; Hye-Ji Seo; Soon-Gil Yoon

doi:10.3740/MRSK.2017.27.2.89

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Characterization of n-type In₃Sb₁Te₂ and p-type Ge₂Sb₂Te₅ Thin Films for Thermoelectric Generators 박막 열전 발전 소자를 위한 In₃Sb₁Te₂와 Ge₂Sb₂Te₅ 박막의 열전 특성에 관한 연구

February 2017. pp. 89-93

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Abstract

A thin film thermoelectric generator that consisted of 5 p/n pairs was fabricated with 1 μm-thick n-type In₃Sb₁Te₂ and p-type Ge2Sb2Te5 deposited via radio frequency magnetron sputtering. First, 1 μm-thick GST and IST thin films were deposited at 250 °C and room temperature, respectively, via radio-frequency sputtering; these films were annealed from 250 to 450 °C via rapid thermal annealing. The optimal power factor was found at an annealing temperature of 400 °C for 10 min. To demonstrate thermoelectric generation, we measured the output voltage and estimated the maximum power of the n-IST/p-GST generator by imposing a temperature difference between the hot and cold junctions. The maximum output voltage and the estimated maximum power of the 1 μm-thick n-IST/p-GST TE generators are approximately 17.1 mV and 5.1 nW at ΔT = 12K, respectively.

Keywords

thermoelectric generator

thin film

GST

IST

chalcogenide materials.

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Information

Publisher :Materials Research Society of Korea
Publisher(Ko) :한국재료학회
Journal Title :Korean Journal of Materials Research
Journal Title(Ko) :한국재료학회지
Volume : 27
No :2
Pages :89-93
Received Date : 2016-10-07
Revised Date : 2016-12-12
Accepted Date : 2016-12-12
DOI :https://doi.org/10.3740/MRSK.2017.27.2.89

Korean Journal of Materials Research ISSN:1225-0562(Print) 2287-7258(Online) 한국재료학회지

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