Analysis of the Improvement of Photoelectrical Properties of Cu2ZnSn(S, Se)4 Thin Film and Solar Cells Via Cation Doping

Youngrog Kim; Suyoung Jang; Jun Sung Jang; Dong Hyun Kang; Jin Hyeok Kim

doi:10.3740/MRSK.2024.34.10.515

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2024 Vol.34, Issue 10 Preview Page Next Page

Research Paper

Analysis of the Improvement of Photoelectrical Properties of Cu₂ZnSn(S,Se)₄ Thin Film and Solar Cells Via Cation Doping 양이온 도핑을 통한 Cu₂ZnSn(S,Se)₄ 박막의 광전기적 특성 향상 및 이를 적용시킨 박막 태양전지의 효율 향상 분석

27 October 2024. pp. 515-521

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Abstract

Solar energy has been recognized as an alternative energy source that can help address fuel depletion and climate change issues. As a renewable energy alternative to fossil fuels, it is an eco-friendly and unlimited energy source. Among solar cells, thin film Cu₂ZnSn(S,Se)₄ (CZTSSe) is currently being actively studied as an alternative to heavily commercialized Cu(In,Ga)Se₂ (CIGS) thin film solar cells, which rely upon costly and scarce indium and gallium. Currently, the highest efficiency achieved by CZTSSe cells is 14.9 %, lower than the CIGS record of 23.35 %. When applied to devices, CZTSSe thin films perform poorly compared to other materials due to problems including lattice defects, conduction band offset, secondary phase information, and narrow stable phase regions, so improving their performance is essential. Research into ways of improving performance by doping with Germanium and Cadmium is underway. Specifically, Ge can be doped into CZTSSe, replacing Sn to reduce pinholes and bulk recombination. Additionally, partially replacing Zn with Cd can facilitate grain growth and suppress secondary phase formation. In this study, we analyzed the device’s performance after doping Ge into CZTSSe thin film using evaporation, and doping Cd using chemical bath deposition. The Ge doped thin film showed a larger bandgap than the undoped reference thin film, achieving the highest V_oc of 494 mV in the device. The Cd doped thin film showed a smaller bandgap than the undoped reference thin film, with the highest J_sc of 36.9 mA/cm². As a result, the thin film solar cells achieved a power conversion efficiency of 10.84 %, representing a 20 % improvement in power conversion efficiency compared to the undoped reference device.

Keywords

Cu₂ZnSn(S,Se)₄

cation doping

thin films

photovoltaic

sputtering

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Information

Publisher :Materials Research Society of Korea
Publisher(Ko) :한국재료학회
Journal Title :Korean Journal of Materials Research
Journal Title(Ko) :한국재료학회지
Volume : 34
No :10
Pages :515-521
Received Date : 2024-08-22
Revised Date : 2024-10-07
Accepted Date : 2024-10-08
DOI :https://doi.org/10.3740/MRSK.2024.34.10.515

Korean Journal of Materials Research ISSN:1225-0562(Print) 2287-7258(Online) 한국재료학회지

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