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2016 Vol.26, Issue 12 Preview Page
Characterization of ZTO Thin Films Transistor Deposited by On-axis Sputtering and Facing Target Sputtering(FTS)

On-axis 스퍼터링과 FTS 공정으로 증착한 ZTO 박막트랜지스터의 특성

Se-Hee Lee
,
Soon-Gil Yoon†
이 세희
,
윤 순길†
Department of Materials Science and Engineering, Chungnam National University, Daeduk Science Town, 34134, Daejeon, Republic of Korea
충남대학교 신소재공학과
†Corresponding author E-Mail : sgyoon@cnu.ac.kr (Soongil Yoon, Chungnam Nat’l Univ.)
December 2016. pp. 676-680
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Abstract

We have investigated the properties of thin film transistors(TFT) fabricated using zinc tin oxide(ZTO) thin films deposited via on-axis sputtering and FTS methods. ZTO thin films deposited by FTS showed lower root-mean-square(RMS) roughness and more uniformity than those deposited via on-axis sputtering. We observed enhanced electrical properties of ZTO TFT deposited via FTS. The ZTO films were deposited at room temperature via on-axis sputtering and FTS. The as-deposited ZTO films were annealed at 400 °C. The TFT using the ZTO films deposited via FTS process exhibited a high mobility of 12.91 cm2/V.s, a low swing of 0.80 V/decade, Vth of 5.78 V, and a high Ion/off ratio of 2.52 × 106.

Keywords
zinc tin oxide
thin film transistor
facing target sputtering
References
1.
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano and H. Hosono, Nature, 432, 488 (2004). 10.1038/nature0309015565150
2.
S. J. Seo, C. G. Choi, Y. H. Hwang and B. S. Bae, J. Phys. D: Appl. Phys., 42, 035106 (2009). 10.1088/0022-3727/42/3/035106
3.
P. Barquinha, A. M. Vila, G. Goncalves, L. Pereira, R. Martins, J. R. Morante and E. Fortunate, IEEE Trans. Electron Dev., 55, 954 (2008). 10.1109/TED.2008.916717
4.
J. S. Lee, Y. J. Kim, Y. U. Lee, Y. H. Kim, J. Y. Kwon and M. K. Han, Jpn. J. Appl. Phys., 51, 061101 (2012). 10.1143/JJAP.51.061101
5.
H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong and D. A. Keszler, Appl. Phys. Lett., 86, 013503 (2005). 10.1063/1.1843286
6.
B. D. Ahn, D. W. Choi, C. Choi and J. S. Park, Appl. Phys. Lett., 105, 092103 (2014). 10.1063/1.4895102
7.
A. Suresh, P. Wellenius, A. Dhawan and J. Muth, Appl. Phys. Lett., 90, 123512 (2007). 10.1063/1.2716355
8.
H. J. Choi, H. J. Jung, S. G. Hur and S. G. Yoon (in Korean), J. KIEEME, 24, 126 (2011). 10.4313/JKEM.2011.24.2.126
9.
R. L. Hoff, Solid-State Electron., 50, 784 (2006). 10.1016/j.sse.2006.03.004
10.
H. J. Choi, S. G. Yoon, J. H. Lee and J. Y. Lee, ECS J. Solid State Sci. Technol., 1, Q106 (2012). 10.1149/2.016205jss
11.
F. M. Hossain, J. Nishii, S. Takagi, A. Ohtomo and T. Fukumura, J. Appl. Phys., 94, 7768 (2003). 10.1063/1.1628834
12.
Y. Y. Choi, S. J. Kang and H. K. Kim, Curr. Appl. Phys., 12, S104 (2012). 10.1016/j.cap.2012.05.014
13.
Y. J. Kim, B. S. Yang, S. Oh, S. J. Han, H. W. Lee, J. Heo, J. K. Jeong and H. J. Kim, ACS Appl. Mater. Interfaces, 5, 3255 (2013). 10.1021/am400110y23540523
14.
J. M. Lee, B. H. Choi, M. J. Ji, J. H. Park, J. H. Kwon and B. K. Ju, Semicond. Sci. Technol., 24, 055008 (2009). 10.1088/0268-1242/24/5/055008
15.
Y. Jeong, K. Song, K. Woo, T. Jun, Y. Jung and J. Moon (in Korean), Korean J. Mater. Res., 20, 401 (2010). 10.3740/MRSK.2010.20.8.401
16.
S. Martin, C. S. Chiang, J. Y. Nahm, T. Li, J. Kanicki and Y. Ugai, Jpn. J. Appl. Phys., 40, 530 (2001). 10.1143/JJAP.40.530
Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 26
  • No :12
  • Pages :676-680
  • Received Date : 2016-10-01
  • Revised Date : 2016-10-27
  • Accepted Date : 2016-10-30
  • DOI :https://doi.org/10.3740/MRSK.2016.26.12.676
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