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2016 Vol.26, Issue 4 Preview Page
Analysis of Sputter-Deposited SnO thin Film with SnO/Sn Composite Target

SnO/Sn 혼합 타겟을 이용한 SnO 박막 제조 및 특성

Cheol Kim1
,
Sungdong Kim2
,
Sarah Eunkyung Kim1†
김 철1
,
김 성동2
,
김 은경1†
1Graduate School of NID Fusion Technology, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
2Department of Mechanical System Design Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
1서울과학기술대학교 NID융합기술대학원
2서울과학기술대학교 기계시스템디자인공학과
†Corresponding author eunkyung@seoultech.ac.kr (S. E. Kim, Seoul Nat'l Uni. Sci. & Tech.)
April 2016. pp. 222-227
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Abstract

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of PO2 = 3 % was obtained with > 80 % transmittance, carrier concentration of 1.12 × 1018 cm−3, and mobility of 1.18 cm2V−1s−1. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

Keywords
SnO
tin oxide
reactive sputtering
composite target
p-type thin film
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 26
  • No :4
  • Pages :222-227
  • Received Date : 2016-01-28
  • Revised Date : 2016-03-15
  • Accepted Date : 2016-03-18
  • DOI :https://doi.org/10.3740/MRSK.2016.26.4.222
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