Korean Journal of Materials Research ISSN:1225-0562(Print) 2287-7258(Online) 한국재료학회지

Graphene has attracted the interest of many researchers due to various its advantages such as high mobility, high transparency, and strong mechanical strength. However, large-area graphene is grown at high temperatures of about 1,000 °C and must be transferred to various substrates for various applications. As a result, transferred graphene shows many defects such as wrinkles/ripples and cracks that happen during the transfer process. In this study, we address transfer-free, large-scale, and high-quality monolayer graphene. Monolayer graphene was grown at low temperatures on Ti (10nm)-buffered Si (001) and PET substrates via plasma-assisted thermal chemical vapor deposition (PATCVD). The graphene area is small at low mTorr range of operating pressure, while 4 × 4 cm² scale graphene is grown at high working pressures from 1.5 to 1.8 Torr. Four-inch wafer scale graphene growth is achieved at growth conditions of 1.8 Torr working pressure and 150 °C growth temperature. The monolayer graphene that is grown directly on the Ti-buffer layer reveals a transparency of 97.4 % at a wavelength of 550 nm, a carrier mobility of about 7,000 cm²/V×s, and a sheet resistance of 98 W/□. Transfer-free, large-scale, high-quality monolayer graphene can be applied to flexible and stretchable electronic devices.