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2023 Vol.33, Issue 11 Preview Page

Research Paper

Characteristics of Tin Oxide Thin Film Grown by Atomic Layer Deposition and Spin Coating Process as Electron Transport Layer for Perovskite Solar Cells

원자층 증착법과 용액 공정법으로 성장한 전자 수송층 산화주석 박막의 페로브스카이트 태양전지 특성

Ki Hyun Kim1
,
Sung Jin Chung2
,
Tae Youl Yang2
,
Jong Chul Lim1
,
Hyo Sik Chang1†
김 기현1
,
정 성진2
,
양 태열2
,
임 종철1
,
장 효식1†
1Graduate School of Energy Science and Technology, Chungnam National University, Republic of Korea
2Department of Materials Science & Engineering, Chungnam National University, Republic of Korea
1충남대학교 에너지과학기술대학원
2충남대학교 신소재공학과
†Corresponding author E-Mail : hschang@cnu.ac.kr (H. S. Chang, Chungnam Nat’l Univ.)
27 November 2023. pp. 475-481
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Abstract

Recently, the electron transport layer (ETL) has become one of the key components for high-performance perovskite solar cell (PSC). This study is motivated by the nonreproducible performance of ETL made of spin coated SnO2 applied to a PSC. We made a comparative study between tin oxide deposited by atomic layer deposition (ALD) or spin coating to be used as an ETL in N-I-P PSC. 15 nm-thick Tin oxide thin films were deposited by ALD using tetrakisdimethylanmiotin (TDMASn) and using reactant ozone at 120 °C. PSC using ALD SnO2 as ETL showed a maximum efficiency of 18.97 %, and PSC using spin coated SnO2 showed a maximum efficiency of 18.46 %. This is because the short circuit current (Jsc) of PSC using the ALD SnO2 layer was 0.75 mA/cm2 higher than that of the spin coated SnO2. This result can be attributed to the fact that the electron transfer distance from the perovskite is constant due to the thickness uniformity of ALD SnO2. Therefore ALD SnO2 is a candidate as a ETL for use in PSC vacuum deposition.

Keywords
atomic layer deposition
perovskite
solar cell
SnO2
electron transport layer
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 33
  • No :11
  • Pages :475-481
  • Received Date : 2023-10-24
  • Revised Date : 2023-10-26
  • Accepted Date : 2023-10-26
  • DOI :https://doi.org/10.3740/MRSK.2023.33.11.475
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