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2026 Vol.36, Issue 3 Preview Page

Research Paper

Performance Enhancement of TiO2-Based Capacitors via Plasma-Enhanced Atomic Layer Deposition and Plasma Pre-Treatment

플라즈마 원자층 증착법과 플라즈마 전처리를 이용한 TiO2 기반 커패시터의 성능 향상

Si Eun Jung1
,
Su Min Eun1
,
Byung Joon Choi1†
정 시은1
,
은 수민1
,
최 병준1†
1Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
1서울과학기술대학교 신소재공학과
†Corresponding author E-Mail : bjchoi@seoultech.ac.kr (B. J. Choi, SEOULTECH)
27 March 2026. pp. 119-129
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Abstract

As dynamic random-access memory (DRAM) devices continue to scale, reducing the equivalent oxide thickness (EOT) of capacitors and achieving precise control of the dielectric-electrode interface have become critical challenges. TiO2 has emerged as a promising high-k dielectric material due to its crystalline phases, anatase (dielectric constant of 30-75) and rutile (dielectric constant of 90-170). However, its application is limited by high leakage current that arises from the low conduction band offset with conventional electrodes. In particular, the low-temperature formation of rutile TiO2 is strongly influenced by lattice mismatch with the bottom electrode. Interface engineering strategies, such as the introduction of RuO2 layers on Ru electrodes, have been proposed to mitigate this issue. In this work, TiN, a bottom electrode widely adopted in mass-production processes, was employed to enhance the electrical performance of TiO2-based capacitors through systematic interface control. The effects of different TiN deposition methods on substrate properties were investigated, and argon plasma treatment was introduced to tailor the dielectric-electrode interface and promote rutile TiO2 formation. Both the TiN bottom electrode and the TiO2 dielectric layer were deposited using plasma-enhanced atomic layer deposition to ensure high film quality. As a result, the leakage current density was suppressed to approximately 10-5 A/cm2 at 0.8 V, while the EOT was reduced to 1.32 nm. These results indicate that the crystallization behavior of TiO2 thin films strongly depends on dielectric thickness and substrate crystallinity. The findings provide important guidelines for developing TiO2-based high-k dielectric thin films for advanced capacitor applications.

Keywords
TiO2
capacitor
leakage current
dielectric constant
plasma treatment
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 36
  • No :3
  • Pages :119-129
  • Received Date : 2026-02-10
  • Revised Date : 2026-03-01
  • Accepted Date : 2026-03-03
  • DOI :https://doi.org/10.3740/MRSK.2026.36.3.119
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