All Issue

2017 Vol.27, Issue 1 Preview Page
Electrical Conduction Mechanism in the Insulating TaNx Film

절연성 TaNx 박막의 전기전도 기구

Sungyeon Ryu
,
Byung Joon Choi†
류 성연
,
최 병준†
Department of Materials Science and Engineering, Seoul National University of Science and Technology
서울과학기술대학교 신소재공학과
†Corresponding author E-Mail : bjchoi@seoultech.ac.kr (B. J. Choi, Seoul Nat’l Univ. Sci. and Technol.)
January 2017. pp. 32-38
PDF XML Citation
Abstract

Insulating TaNx films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and N2+H2 mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a Pt/TaNx/Pt stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the Poole- Frenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick TaNx films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution (ON) and interstitial nitrogen (Ni) in the TaNx films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of TaNx film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.

Keywords
TaN film
electrical transport
Poole-Frenkel emission
plasma enhanced atomic layer deposition
References
1.
C. C. Chang, J. S. Jeng and J. S. Chen, Thin Solid Films, 413, 46 (2002). 10.1016/S0040-6090(02)00342-5
2.
J. Kwon and Y. J. Chabal, Appl. Phys. Lett., 96, 2008 (2010). 10.1063/1.3396189
3.
Y. Zhao and G. Lu, Phys. Res. B, 79, 214104 (2009). 10.1103/PhysRevB.79.214104
4.
S. M. Kim, G. R. Lee and J. J. Lee, Jpn. J. Appl. Phys., 47, 6953 (2008). 10.1143/JJAP.47.6953
5.
S. I. Nakao, M. Numata and T. Ohmi, Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap. 38, 2401 (1999). 10.1143/JJAP.38.2401
6.
K. Kim and J. Choi, in Proceedings of Non-Volatile Semiconductor Memory Workshop (Monterey, CA, February 2006) (IEEE, USA, 2006) p.9.
7.
L. Yu, C. Stampfl, D. Marshall, T. Eshrich, V. Narayanan, J. Rowell, N. Newman and A. Freeman, Phys. Rev. B, 65, 245110 (2002). 10.1103/PhysRevB.65.245110
8.
A. Malmros, K. Andersson and N. Rorsman, Thin Solid Films, 520, 2162 (2012). 10.1016/j.tsf.2011.09.050
9.
A. Engel, A. Aeschbacher, K. Inderbitzin, A. Schilling, K. Il’In, M. Hofherr, M. Siegel, A. Semenov and H. W. Hübers, Appl. Phys. Lett., 100, 1 (2012). 10.1063/1.3684243
10.
B. J. Choi, J. Zhang, K. Norris, G. Gibson, K. M. Kim, W. Jackson, M. X. M. Zhang, Z. Li, J. J. Yang and R. S. Williams, Adv. Mater., 28, 356 (2016). 10.1002/adma.20150360426584142PMC4737268
11.
T. H. Park, S. J. Song, H. J. Kim, S. G. Kim, S. Chung, B. Y. Kim, K. J. Lee, K. M. Kim, B. J. Choi and C. S. Hwang, Phys. Status Solidi Rapid Res. Lett., 9, 362 (2015). 10.1002/pssr.201510110
12.
T. H. Park, S. J. Song, H. J. Kim, S. G. Kim, S. Chung, B. Y. Kim, K. J. Lee, K. M. Kim, B. J. Choi and C. S. Hwang, Sci. Rep., 5, 15965 (2015). 10.1038/srep1596526527044PMC4630583
13.
B. J. Choi, A. C. Torrezan, J. P. Strachan, P. G. Kotula, A. J. Lohn, M. J. Marinella, Z. Li, R. S. Williams and J. J. Yang, Adv. Funct. Mater., 26, 5290 (2016). 10.1002/adfm.201600680
14.
F. Chiu, Adv. Mater. Sci. Eng., 2014, 578168 (2014).
15.
S. Somani, A. Mukhopadhyay and C. Musgrave, J. Phys. Chem. C, 115, 11507 (2011). 10.1021/jp1059374
16.
Z. Fang, H. C. Aspinall, R. Odedra and R. J. Potter, J. Cryst. Growth, 331, 33 (2011). 10.1016/j.jcrysgro.2011.07.012
17.
B. B. Burton, A. R. Lavoie and S. M. George, J. Electrochem. Soc., 155, D508 (2008). 10.1149/1.2908741
18.
M. Ritala, P. Kalsi, D. Riihela, K. Kukli, M. Leskela and J. Jokinen, Chem. Mater., 11, 1712 (1999). 10.1021/cm980760x
19.
H. Kim, A. J. Kellock and S. M. Rossnagel, J. Appl. Phys., 92, 7080 (2002). 10.1063/1.1519949
20.
H.-S. Chung, J.-D. Kwon and S.-W. Kang, J. Electrochem. Soc., 153, C751 (2006). 10.1149/1.2344834
21.
C. M. Fang, E. Orhan, G. A. de Wijs, H. T. Hintzen, R. A. de Groot, R. Marchand, J.-Y. Saillard and G. de With, J. Mater. Chem., 11, 1248 (2001). 10.1039/b005751g
Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 27
  • No :1
  • Pages :32-38
  • Received Date : 2016-11-14
  • Revised Date : 2016-11-28
  • Accepted Date : 2016-11-28
  • DOI :https://doi.org/10.3740/MRSK.2017.27.1.32
Journal Informaiton Korean Journal of Materials Research Korean Journal of Materials Research
Online Submission
  • scopus
  • NRF
  • KOFST
  • crossref crossmark
  • crossref cited-by
  • crosscheck
  • open access
  • ccl
Journal Informaiton Journal Informaiton - close