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2022 Vol.32, Issue 8
High-Performance Schottky Junction for Self-Powered, Ultrafast, Broadband Alternating Current Photodetector
Jaeseong Lim1
,
Mohit Kumar2
,
Hyungtak Seo12†
1Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
2Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea
†Corresponding author E-Mail : hseo@ajou.ac.kr (H. Seo, Ajou Univ.)
August 2022. pp. 333-338
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Abstract

In this work, we developed silver nanowires and a silicon based Schottky junction and demonstrated ultrafast broadband photosensing behavior. The current device had a response speed that was ultrafast, with a rising time of 36 μs and a falling time of 382 μs, and it had a high level of repeatability across a broad spectrum of wavelengths (λ = 365 to 940 nm). Furthermore, it exhibited excellent responsivity of 60 mA/W and a significant detectivity of 3.5 × 1012 Jones at a λ = 940 nm with an intensity of 0.2 mW cm-2 under zero bias operating voltage, which reflects a boost of 50%, by using the AC PV effect. This excellent broadband performance was caused by the photon-induced alternative photocurrent effect, which changed the way the optoelectronics work. This innovative approach will open a second door to the potential design of a broadband ultrafast device for use in cutting-edge optoelectronics.

Keywords
Schottky junction
alternating current photovoltaic effect
photodetector
silver nanowire
self-powering
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 32
  • No :8
  • Pages :333-338
  • Received Date : 2022-07-30
  • Revised Date : 2022-08-19
  • Accepted Date : 2022-08-19
  • DOI :https://doi.org/10.3740/MRSK.2022.32.8.333
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