All Issue

2020 Vol.30, Issue 4 Preview Page
Characteristics of Silicon Nitride Deposited Thin Films on IT Glass by RF Magnetron Sputtering Process

RF Magnetron Sputtering공정에 의해 IT유리에 적층시킨 Silicon Nitride 박막의 특성

Jeongil Son
,
Gwangsoo Kim†
손 정일
,
김 광수†
Department of Materials Engineering, Soonchunhyang University, Asan, Chungnam 31538, Republic of Korea
순천향대학교 디스플레이·신소재공학과
†Corresponding author E-Mail : kgwangs@sch.ac.kr (G. S. Kim, Soonchunhyang Univ.)
April 2020. pp. 169-175
PDF XML Citation
Abstract

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N2 sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10−3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N2 gas in the Ar:N2 gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N2 gas ratio and large amount of N2 gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N2=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO2-SixNy thin film is satisfactory at 97 %.

Keywords
RF magnetron sputtering
silicon nitride thin film
nano-indentation
transmittance
References
1.
H. W. Ahn, J. H. Oh, S. G. Kweon and S. D. Choi, J. Korean Soc. Manuf. Process. Eng., 13, 145 (2014). 10.14775/ksmpe.2014.13.6.145
2.
S. H. Lee, H. E. Song, G. H Kang, H. K. Ahn and D. Y. Han, Korean Inst. Electr. Eng., 62, 76 (2013)(in Korean). 10.5370/KIEE.2012.62.1.076
3.
K. S. Kim, G. H. Kang and G. J. Yu. J(in Korean), Kor. Sol. Energ. Soc., 28, 5 (2008).
4.
D. Y. Kong, D. H. Kim, S. H. Yun, Y. H. Bae, I. S. Yu, C. S. Cho and J. H. Lee (in Korean), J. Korean Vacuum Soc., 20, 233 (2011). 10.5757/JKVS.2011.20.3.233
5.
Shatter proof film process, korvan Home Page, retrieved November, 2007 from korvanchem.kr/bbs.
6.
K. Nakata, M. Sakai, T. Ochiai, T. Murakami, K. Takagi and A. Fujishima, Langmuir, 27, 3275 (2011). 10.1021/la200438p21391643
7.
H. R. Lee, D. J. Kim and K. H. Lee, Surf. Coat. Technol., 142, 468 (2001). 10.1016/S0257-8972(01)01137-9
8.
D. S. Hecht, D. Thomas, L. Hu, C. Ladous, T. Lam, Y. B. Park, G. Irvin and P. Drzaic, J. Soc. Information Display, 17, 941(2009). 10.1889/JSID17.11.941
9.
N. Yamaguchi, K. Tadanaga, A. Matsuda, T. Minami and M. Tatsumisago, Surf. Coat. Technol., 201, 3653 (2006). 10.1016/j.surfcoat.2006.08.122
10.
B. G. Kum, Y. C. Park, Y. J. Chang, J. Y. Jeon and H. M. Jang, Thin Solid Films, 519, 3778 (2011). 10.1016/j.tsf.2010.12.163
11.
B. Louis, N. Krins, M. Faustini and D. Grosso, J. Phys. Chem. C, 115, 3115 (2011). 10.1021/jp109653p
12.
W. Qiu, Y. M. Kang and L. L. Goddard, Appl. Phys. Lett., 96, 141116 (2010). 10.1063/1.3380825
13.
H. A. Macleod, Thin-film Optical Filters, 2nd ed (Macmi llan, NY, USA, 1986) , from http://www.thinfilmcenter.com/book.php 10.1887/0750306882
14.
J. Dai, W. Gao, B. Liu, X. Cao, T. Z. Xie, H. Zhao, D. Chen, H. Ping and R. Zhang, Appl. Surf. Sci., 364, 886 (2016). 10.1016/j.apsusc.2015.12.222
15.
A. Ulvestad, H. F. Andersen, J. P. Mæhlen, Ø. Prytz and M. Kirkengen, Sci. Rep., 7, 13315 (2017). 10.1038/s41598-017-13699-029042626PMC5645470
16.
D. Dergez, M. Schneider, A. Bittner and U. Schmid, Thin Solid Films, 589, 227 (2015). 10.1016/j.tsf.2015.05.028
17.
J. C. Barbour, H. J. Stein, O. A. Popov, M. Yonder and C. A. Outten, J. Vac. Sci. Technol., A, 9, 480 (1991). 10.1116/1.577392
18.
I. Kobayashi, T. Ogawa and S. Hotta, Jpn. J. Appl. Phys., 31, 336 (1992). 10.1143/JJAP.31.336
19.
J. H. Kim. Thesis (in Korean), Inha University, Korea (2014).
20.
G. Cheng, J. Qian, Z. Tang and G. Ding, Ceram. Int., 41, 1879 (2015). 10.1016/j.ceramint.2014.09.013
21.
M. Villa, D. Caceres and C. Prieto, J. Appl. Phys., 94, 12 (2003). 10.1063/1.1626799
22.
L. Diegues, D. Caballero, J. Calder, M. Moreno, E. Martnez and J. Samitier, Biosensors, 2, 114 (2012). 10.3390/bios202011425585707PMC4263575
23.
X. Sun, H. T. Liu and H. F. Cheng, RSC Advances, 7, 47833 (2017). 10.1039/C7RA09056K
24.
Y. Hirohata, N. Shimamoto, T. Hino, T. Yamashima and K. Yabe, Thin Slid Films, 253, 425 (1999). 10.1016/0040-6090(94)90360-3
25.
Z. Gan, C. Wang and Z. Chen, J. Surface, 1, 59 (2018).
Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 30
  • No :4
  • Pages :169-175
  • Received Date : 2020-02-20
  • Revised Date : 2020-03-17
  • Accepted Date : 2020-03-18
  • DOI :https://doi.org/10.3740/MRSK.2020.30.4.169
Journal Informaiton Korean Journal of Materials Research Korean Journal of Materials Research
Online Submission
  • scopus
  • NRF
  • KOFST
  • crossref crossmark
  • crossref cited-by
  • crosscheck
  • open access
  • ccl
Journal Informaiton Journal Informaiton - close