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2016 Vol.26, Issue 10 Preview Page
Comparison of Electrical Properties between Sputter Deposited Au and Cu Schottky Contacts to n-type Ge
Hogyoung Kim1†
,
Min Kyung Kim2
,
Yeon Jin Kim2
1Department of Visual Optics, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
2Department of Electronic and IT Media Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
†Corresponding author : hogyoungkim@gmail.com (H. Kim, Seoul Nat’l Univ. Sci. Technol.)
October 2016. pp. 556-560
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Abstract

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

Keywords
barrier height
series resistance
interface state
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 26
  • No :10
  • Pages :556-560
  • Received Date : 2016-08-19
  • Revised Date : 2016-09-01
  • Accepted Date : 2016-09-05
  • DOI :https://doi.org/10.3740/MRSK.2016.26.10.556
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