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2018 Vol.28, Issue 4 Preview Page
Heat Treatment of Carbonized Photoresist Mask with Ammonia for Epitaxial Lateral Overgrowth of a-plane GaN on R-plane Sapphire
Dae-sik Kim1*
,
Jun-hyuck Kwon1*
,
Junggeun Jhin2
,
Dongjin Byun1†
1Department of Materials Science & Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
2LED Procurement Team, LG Innotek, 570 Hyuam-ro, Munsan-eup, Paju-si, Gyeonggi-do 10842, Republic of Korea
†Corresponding author E-Mail : dbyun@korea.ac.kr (D. Byun, Korea Univ.)

(* These two authors are equally contributed as first authors.)

April 2018. pp. 208-213
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Abstract

Epitaxial (1120) a-plane GaN films were grown on a (1102) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient H2/NH3 mixture gas at 1140 °C after carbonization by the pyrolysis in ambient H2 at 1100 °C. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ω-2θ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After Ar+ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

Keywords
heat treatment
photoresist mask
gallium nitride thin film
epitaxial lateral overgrowth
metal organic chemical vapor deposition
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 28
  • No :4
  • Pages :208-213
  • Received Date : 2017-11-02
  • Revised Date : 2018-03-12
  • Accepted Date : 2018-03-16
  • DOI :https://doi.org/10.3740/MRSK.2018.28.4.208
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