Effect of Growth Methods of InAs Quntum Dots on Infrared Photodetector Properties

Dong-Bum Seo; Je-hwan Hwang; Boram Oh; Sam Kyu Noh; Jun Oh Kim; Sang Jun Lee; Eui-Tae Kim

doi:10.3740/MRSK.2018.28.11.659

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2018 Vol.28, Issue 11 Preview Page Next Page

Effect of Growth Methods of InAs Quntum Dots on Infrared Photodetector Properties InAs 양자점 형성 방법이 양자점 적외선 소자 특성에 미치는 효과

November 2018. pp. 659-662

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Abstract

We report the properties of infrared photodetectors based on two kinds of quantum dots(QDs): i) 2.0 ML InAs QDs by the Stranski-Krastanov growth mode(SK QDs) and ii) sub-monolayer QDs by 4 × [0.3 ML/1 nm In_0.15Ga_0.85As] deposition(SML QDs). The QD infrared photodetector(QDIP) structure of n⁺-n⁻(QDs)-n⁺ is epitaxially grown on GaAs (100) wafers using molecular-beam epitaxy. Both the bottom and top contact GaAs layers are Si doped at 2 × 1018/cm³. The QD layers are grown with Si doping of 2 × 10¹⁷/cm³ and capped by an In_0.15Ga_0.85As layer at 495 °C. The photoluminescence peak(1.24 eV) of the SML QDIP is blue-shifted with respect to that (1.04 eV) of SK QDIPs, suggesting that the electron ground state of SML QDIP is higher than that of the SK QDIP. As a result, the photoresponse regime(~9-14 μm) of the SML QDIP is longer than that (~6-12 μm) of the SK QDIP. The dark current of the SML QDIP is two orders of magnitude smaller value than that of the SK QDIP because of the inserted Al_0.08Ga_0.92As layer.

Keywords

InAs

quantum dots

infrared detectors

molecular beam epitaxy

References

H. Yuan , G. Apgar, J. Kim, J. Laquindanum, V. Nalavade, P. Beer, J. Kimchi and T. Wong, Proc. SPIE, 6940, 69403C1 (2008).

P. Norton , J. Campbell III, S. Horn and D. Reago, Proc. SPIE, 4130, 226 (2000). 10.1117/12.409861

S. Horn , P. Norton, T. Cincotta, A. J. Stoltz, Jr., J. D. Benson, P. Perconti and J. Campbell III, Proc. SPIE, 5074, 44 (2003). 10.1117/12.501269

W. A. Radford , E. A. Patten, D. F. King, G. K. Pierce, J. Vodicka, P. Goetz, G. Venzor, E. P. Smith, R. Graham, S. M. Johnson, J. Roth, B. Nosho and J. Jensen, Proc. SPIE, 5783, 325 (2005). 10.1117/12.609494

A. Rogalski , Prog. in Quantum Electron., 27, 59 (2003). 10.1016/S0079-6727(02)00024-1

B. F. Levine , J. Appl. Phys., 74, R1 (1993). 10.1063/1.354252

A. Madhukar , J. Campbell, E. T. Kim, Z. H. Chen and J. Ye, in Semiconductor Nanostructures for Optoelectronics,Artech House, Inc., (2004).

E. T. Kim , Z. H. Chen and A. Madhukar, Appl. Phys. Lett., 79, 3341 (2001). 10.1063/1.1417513

Z. Ye , J. Campbell, Z. H. Chen, E. T. Kim and A. Madhukar, IEEE J. Quantum Electron., 38, 1234 (2002). 10.1109/JQE.2002.802159

10.

E. T. Kim , Z. H. Chen, M. Ho and A. Madhukar, J. Vac. Sci. Technol. B, 20, 1188 (2002). 10.1116/1.1463695

11.

S. J. Lee , J. O. Kim, Y. G. Kim, S. K. Noh, Y. H. Kyu, S. M. Choi and J. W. Choe, J. Korean Phys. Soc., 46,1396 (2005).

12.

J. O. Kim , S. J. Lee, S. K. Noh, Y. H. Ryu, S. M. Choi and J. W. Choe, J. Korean Phys. Soc., 47, 838 (2005).

13.

David Z.-Y. Ting, Sumith V. Bandara, Sarath D. Gunapala, Jason M. Mumolo, Sam A. Keo, Cory J. Hill, John K. Liu, Edward R. Blazejewski, Sir B. Rafol, andYia-Chung Chang. Appl. Phys. Lett., 94, 111107 (2009).

14.

J. O. Kim , S. Sengupta, A. V. Barve, Y. D. Sharma, S. Adhikary, S. J. Lee, S. K. Noh, M. S. Allen, J. W. Allen, S. Chakrabarti and S. Krishna, Appl. Phys. Lett., 102,011131 (2013). 10.1063/1.4774383

Information

Publisher :Materials Research Society of Korea
Publisher(Ko) :한국재료학회
Journal Title :Korean Journal of Materials Research
Journal Title(Ko) :한국재료학회지
Volume : 28
No :11
Pages :659-662
Received Date : 2018-04-29
Revised Date : 2018-08-09
Accepted Date : 2018-10-16
DOI :https://doi.org/10.3740/MRSK.2018.28.11.659

Korean Journal of Materials Research ISSN:1225-0562(Print) 2287-7258(Online) 한국재료학회지

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