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2020 Vol.30, Issue 4 Preview Page
Effect of Sputtering Working Pressure on the Optical and Electrical Properties of InZnO Thin-Film Transistors

스퍼터링 공정 압력이 InZnO 박막트랜지스터의 광학 및 전기적 특성에 미치는 영향

Ji-Min Park
,
Hyoung-Do Kim
,
Seong Cheol Jang
,
Hyun-Suk Kim†
박 지민
,
김 형도
,
장 성철
,
김 현석†
Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea
충남대학교 신소재공학과
†Corresponding author E-Mail : khs3297@cnu.ac.kr (H.-S. Kim, Chungnam Nat’l Univ.)
April 2020. pp. 211-216
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Abstract

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors, because of their relatively low mobility, have limits in attempts to fulfill high-end specifications for display backplanes. In-Zn-O (IZO) is a promising semiconductor material for high mobility device applications with excellent transparency to visible light region and low temperature process capability. In this paper, the effects of working pressure on the physical and electrical properties of IZO films and thin film transistors are investigated. The working pressure is modulated from 2 mTorr to 5 mTorr, whereas the other process conditions are fixed. As the working pressure increases, the extracted optical band gap of IZO films gradually decreases. Absorption coefficient spectra indicate that subgap states increase at high working pressure. Furthermore, IZO film fabricated at low working pressure shows smoother surface morphology. As a result, IZO thin film transistors with optimum conditions exhibit excellent switching characteristics with high mobility (≥ 30cm2/Vs) and large on/off ratio.

Keywords
amorphous oxide semiconductor
thin film transistors
InZnO
magnetron sputtering
high mobility
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 30
  • No :4
  • Pages :211-216
  • Received Date : 2020-03-12
  • Revised Date : 2020-04-02
  • Accepted Date : 2020-04-03
  • DOI :https://doi.org/10.3740/MRSK.2020.30.4.211
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