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2018 Vol.28, Issue 8 Preview Page
Leakage Current Reduction of Ni-MILC Poly-Si TFT Using Chemical Cleaning Method
Kwang-Jin Lee1
,
Doyeon Kim2
,
Duck-Kyun Choi1†
,
Woo-Byoung Kim2†
1Department of Materials Science & Engineering, Hanyang University, Seoul 04763, Republic of Korea
2Department of Energy Engineering, Dankook University, Cheonan 31116, Republic of Korea
†Corresponding author E-Mail : woo7838@dankook.ac.kr (W.-B. Kim, Dankook Univ.) duck@hanyang.ac.kr (D.-K. Choi, Hanyang Univ.)
August 2018. pp. 440-444
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Abstract

An effective cleaning method for Ni removal in Ni-induced lateral crystallization(Ni-MILC) poly-Si TFTs and their electrical properties are investigated. The HCN cleaning method is effective for removal of Ni on the crystallized Si surface, while the nitric acid treatment results decrease by almost two orders of magnitude in the Ni concentration due to effective removal of diffused Ni mainly in the poly-Si grain boundary regions. Using the HCN cleaning method after the nitric acid treatment, re-adsorbed Ni on the Si surfaces is effectively removed by the formation of Ni-cyanide complexions. After the cleaning process, important electrical properties are improved, e.g., the leakage current density from 9.43 × 10−12 to 3.43 × 10−12 A and the subthreshold swing values from 1.37 to 0.67 mV/dec.

Keywords
nickel removal
poly-Si TFTs
nitric acid treatment
hydrogen cyanide cleaning
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 28
  • No :8
  • Pages :440-444
  • Received Date : 2018-05-14
  • Revised Date : 2018-07-09
  • Accepted Date : 2018-07-21
  • DOI :https://doi.org/10.3740/MRSK.2018.28.8.440
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