Selective Emitter Formation of Borosilicate-Glass (BSG) Layer using UV Laser

Ga Min Kim; Hyo Sik Chang

doi:10.3740/MRSK.2021.31.12.727

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2021 Vol.31, Issue 12 Preview Page

Selective Emitter Formation of Borosilicate-Glass (BSG) Layer using UV Laser UV Laser를 이용한 Borosilicate-Glass (BSG)층의 선택적 에미터 형성

December 2021. pp. 727-731

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Abstract

In this study, we have investigated a selective emitter using a UV laser on BBr₃ diffusion doping layer. The selective emitter has two regions of high and low doping concentration alternatively and this structure can remove the disadvantages of homogeneous emitter doping. The selective emitters were fabricated by using UV laser of 355 nm on the homogeneous emitters which were formed on n-type Si by BBr₃ diffusion in the furnace and the heavy boron doping regions were formed on the laser regions. In the optimized laser doping process, we are able to achieve a highly concentrated emitter with a surface resistance of up to 43 Ω/□ from 105 ± 6 Ω/□ borosilicate glass (BSG) layer on Si. In order to compare the characteristics and confirm the passivation effect, the annealing is performed after Al₂O₃ deposition using an ALD. After the annealing, the selective emitter shows a better effect than the high concentration doped emitter and a level equivalent to that of the low concentration doped emitter.

Keywords

uv laser

laser doping

selective emitter

borosilicate glass (BSG)

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Information

Publisher :Materials Research Society of Korea
Publisher(Ko) :한국재료학회
Journal Title :Korean Journal of Materials Research
Journal Title(Ko) :한국재료학회지
Volume : 31
No :12
Pages :727-731
Received Date : 2021-11-08
Revised Date : 2021-12-15
Accepted Date : 2021-12-15
DOI :https://doi.org/10.3740/MRSK.2021.31.12.727

Korean Journal of Materials Research ISSN:1225-0562(Print) 2287-7258(Online) 한국재료학회지

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