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2018 Vol.28, Issue 12 Preview Page
Element Analysis related to Mobility and Stability of ZTO Thin Film using the CO2 Gases

이산화탄소를 이용한 ZTO 박막의 이동도와 안정성분석

Teresa Oh†
오 데레사†
Department of Semiconductor Engineering, Cheongju University, Cheongju 28503, Republic of Korea
청주대학교 반도체공학과
†Corresponding author : E-Mail : teresa@cju.ac.kr (T. Oh, Cheongju Univ.)
December 2018. pp. 758-762
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Abstract

The transfer characteristics of zinc tin oxide(ZTO) on silicon dioxide(SiO2) thin film transistor generally depend on the electrical properties of gate insulators. SiO2 thin films are prepared with argon gas flow rates of 25 sccm and 30 sccm. The rate of ionization of SiO2(25 sccm) decreases more than that of SiO2(30 sccm), and then the generation of electrons decreases and the conductivity of SiO2(25 sccm) is low. Relatively, the conductivity of SiO2(30 sccm) increases because of the high rate of ionization of argon gases. Therefore, the insulating performance of SiO2(25 sccm) is superior to that of SiO2(30 sccm) because of the high potential barrier of SiO2(25 sccm). The ZTO/SiO2 transistors are prepared to research the CO2 gas sensitivity. The stability of the transistor of ZTO/SiO2(25 sccm) as a high insulator is superior owing to the high potential barrier. It is confirmed that the electrical properties of the insulator in transistor devices is an important factor to detect gases.

Keywords
ZTO
depletion layer
insulator
capacitance
SiO2.
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 28
  • No :12
  • Pages :758-762
  • Received Date : 2018-04-19
  • Revised Date : 2018-11-30
  • Accepted Date : 2018-11-30
  • DOI :https://doi.org/10.3740/MRSK.2018.28.12.758
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