Improving Interface Characteristics of Al2O3-Based Metal-Insulator-Semiconductor(MIS) Diodes Using H2O Prepulse Treatment by Atomic Layer Deposition

Hogyoung Kim; Min Soo Kim; Sung Yeon Ryu; Byung Joon Choi

doi:10.3740/MRSK.2017.27.7.362

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Improving Interface Characteristics of Al₂O₃-Based Metal-Insulator-Semiconductor(MIS) Diodes Using H₂O Prepulse Treatment by Atomic Layer Deposition

July 2017. pp. 362-366

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Abstract

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of Au/Al₂O₃/n-Ge metal-insulator-semiconductor (MIS) diodes prepared with and without H₂O prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the Al₂O₃ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the Ge/Al₂O₃ interface.

Keywords

H₂O prepulse treatment

atomic layer deposition(ALD)

Al₂O₃ interlayer

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Information

Publisher :Materials Research Society of Korea
Publisher(Ko) :한국재료학회
Journal Title :Korean Journal of Materials Research
Journal Title(Ko) :한국재료학회지
Volume : 27
No :7
Pages :362-366
Received Date : 2017-05-18
Revised Date : 2017-06-07
Accepted Date : 2017-06-09
DOI :https://doi.org/10.3740/MRSK.2017.27.7.362

Korean Journal of Materials Research ISSN:1225-0562(Print) 2287-7258(Online) 한국재료학회지

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