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2018 Vol.28, Issue 9 Preview Page
Growth of Copper Oxide Thin Films Deposited by Ultrasonic-Assisted Spray Pyrolysis Deposition Method

초음파 분무 열분해법을 이용한 구리산화물 박막 성장

In Sub Han
,
Il-Kyu Park†
한 인섭
,
박 일규†
Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 139-743, Republic of Korea
서울과학기술대학교 신소재공학과
†Corresponding author E-Mail : pik@seoultech.ac.kr (I.-K. Park, Seoul Nat’l Univ. of Sci. and Techn.)
September 2018. pp. 516-521
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Abstract

Copper oxide thin films are deposited using an ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of substrate temperature and incorporation of a chelating agent on the growth of copper oxide thin films, the structural and optical properites of the copper oxide thin films are analyzed by X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), and UV-Vis spectrophotometry. At a temperature of less than 350 °C, threedimensional structures consisting of cube-shaped Cu2O are formed, while spherical small particles of the CuO phase are formed at a temperature higher than 400 °C due to a Volmer-Weber growth mode on the silicon substrate. As a chelating agent was added to the source solutions, two-dimensional Cu2O thin films are preferentially deposited at a temperature less than 300 °C, and the CuO thin film is formed even at a temperature less than 350 °C. Therefore the structure and crystalline phase of the copper oxide is shown to be controllable.

Keywords
copper oxide
band gap energy
oxidation state
spray pyrolysis deposition
thin film
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 28
  • No :9
  • Pages :516-521
  • Received Date : 2018-08-17
  • Revised Date : 2018-09-03
  • Accepted Date : 2018-09-03
  • DOI :https://doi.org/10.3740/MRSK.2018.28.9.516
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