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2016 Vol.26, Issue 8 Preview Page
Film Properties of Al Thin Films Depending on Process Parameters and Film Thickness Grown by Sputter

스퍼터로 성장된 알루미늄 박막의 공정 변수와 박막 두께에 따른 물성

Il-Kwon Oh1
,
Chang Mo Yoon1
,
Jin Wook Jang2
,
Hyungjun Kim1†
오 일권1
,
윤 창모1
,
장 진욱2
,
김 형준1†
1School of Electrical and Electronics Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
2Samsung Electronics Test & Package Center, 158 Baebang-ro, Baebang-eup, Asan-si, Chungcheongnam-do 31489, Republic of Korea
1연세대학교 전기전자공학부,
2삼성전자 Test & Package Center
†Corresponding author hyungjun@yonsei.ac.kr (H. Kim, Yonsei Univ.)
August 2016. pp. 438-443
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Abstract

We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Since the roughness of a film increases with the increase of the distribution and average size of hillocks, the control of hillock formation is a key factor in the reduction of Al corrosion. We observed the lowest hillock formation at 30 W and 100 °C. This growth characteristic of sputtered Al thin films will be useful for the reduction of Al corrosion in the future of the electronic packaging field.

Keywords
Al thin films
sputtering
corrosion
process parameter
hillock distribution.
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 26
  • No :8
  • Pages :438-443
  • Received Date : 2016-03-25
  • Revised Date : 2016-07-08
  • Accepted Date : 2016-07-08
  • DOI :https://doi.org/10.3740/MRSK.2016.26.8.438
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