Characterization of the Schottky Barrier Height of the Pt/HfO2/p-type Si MIS Capacitor by Internal Photoemission Spectroscopy

Sang Yeon Lee; Hyungtak Seo

doi:10.3740/MRSK.2017.27.1.48

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Characterization of the Schottky Barrier Height of the Pt/HfO₂/p-type Si MIS Capacitor by Internal Photoemission Spectroscopy 내부 광전자방출 분광법을 이용한 Pt/HfO₂/p-Si Metal-Insulator-Semiconductor 커패시터의 쇼트키 배리어 분석

January 2017. pp. 48-52

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Abstract

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/HfO₂/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of HfO₂. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/HfO₂/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/HfO₂/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

Keywords

internal photoemission spectorscopy

HfO₂

capacitor

MOS

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Information

Publisher :Materials Research Society of Korea
Publisher(Ko) :한국재료학회
Journal Title :Korean Journal of Materials Research
Journal Title(Ko) :한국재료학회지
Volume : 27
No :1
Pages :48-52
Received Date : 2016-10-19
Revised Date : 2016-12-01
Accepted Date : 2016-12-02
DOI :https://doi.org/10.3740/MRSK.2017.27.1.48

Korean Journal of Materials Research ISSN:1225-0562(Print) 2287-7258(Online) 한국재료학회지

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