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2018 Vol.28, Issue 2 Preview Page
Removal of Interface State Density of SiO2/Si Structure by Nitric Acid Oxidation Method

질산산화법을 이용한 SiO2/Si 구조의 계면결함 제거

Jaeyoung Choi
,
Doyeon Kim
,
Woo-Byoung Kim†
최 재영
,
김 도연
,
김 우병†
Department of Energy Engineering, Dankook University, Cheonan-si 31116, Republic of Korea
단국대학교 에너지공학과
†Corresponding author : woo7838@dankook.ac.kr (W-B. Kim, Dankook Univ.)
February 2018. pp. 118-123
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Abstract

5 nm-thick SiO2 layers formed by plasma-enhanced chemical vapor deposition (PECVD) are densified to improve the electrical and interface properties by using nitric acid oxidation of Si (NAOS) method at a low temperature of 121 °. The physical and electrical properties are clearly investigated according to NAOS times and post-metallization annealing (PMA) at 250 °C for 10 min in 5 vol% hydrogen atmosphere. The leakage current density is significantly decreased about three orders of magnitude from 3.110 × 10−5 A/cm2 after NAOS 5 hours with PMA treatment, although the SiO2 layers are not changed. These dramatically decreases of leakage current density are resulted from improvement of the interface properties. Concentration of suboxide species (Si1+, Si2+ and Si3+) in SiOx transition layers as well as the interface state density (Dit) in SiO2/Si interface region are critically decreased about 1/3 and one order of magnitude, respectively. The decrease in leakage current density is attributed to improvement of interface properties though chemical method of NAOS with PMA treatment which can perform the oxidation and remove the OH species and dangling bond.

Keywords
SiO2/Si interface
interface properties
nitric acid oxidation
densification
interface state density
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 28
  • No :2
  • Pages :118-123
  • Received Date : 2017-12-06
  • Revised Date : 2018-01-09
  • Accepted Date : 2018-01-09
  • DOI :https://doi.org/10.3740/MRSK.2018.28.2.118
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