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2017 Vol.27, Issue 5 Preview Page
Analysis of Crystallinity and Electrical Characteristics of Oxide Semiconductor of ZnO in Accordance with Annealing Methods

ZnO의 열처리방법에 따른 전기적인 특성의 변화와 결정성

Teresa Oh†
오 데레사†
Department of Semiconductor Engineering, Cheongju University
청주대학교 반도체공학과
†Corresponding author : teresa@cju.ac.kr (T. Oh, Cheongju Univ.)
May 2017. pp. 242-247
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Abstract

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.

Keywords
ZnO
XRD
PL spectra
capacitance.
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 27
  • No :5
  • Pages :242-247
  • Received Date : 2016-09-04
  • Revised Date : 2017-03-15
  • Accepted Date : 2017-03-21
  • DOI :https://doi.org/10.3740/MRSK.2017.27.5.242
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