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2021 Vol.31, Issue 6 Preview Page

Technical Report

Effects of Growth Ambient, Process Pressure, and Heat Treatments on the Properties of RF Magnetron Sputtered GaMgZnO UV-Range Transparent Conductive Films
Vijay Patil
,
Chesin Lee
,
Byung-Teak Lee†
Photonic and Electronic Thin Film Laboratory, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-dong, Gwangju 500-757, Republic of Korea
†Corresponding author E-Mail : btlee@jnu.ac.kr (B.-T. Lee, Chonnam Nat'l Univ.)
June 2021. pp. 320-324
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Abstract

Effects of growth variables and post-growth annealing on the optical, structural and electrical properties of magnetron-sputtered Ga0.04Mg0.10Zn0.86O films are characterized in detail. It is observed that films grown from pure oxygen plasma showed high resistivity, ~102 Ω·cm, whereas films grown in Ar plasma showed much lower resistivity, 2.0 × 10− 2 ~ 1.0 × 10−1 Ω·cm. Post-growth annealing significantly improved the electrical resistivity, to 4.3 ~ 9.0 × 10−3 Ω·cm for the vacuum annealed samples and to 1.3 ~ 3.0 × 10−3 Ω·cm for the films annealed in Zn vapor. It is proposed that these phenomena may be attributed to the improved crystalline quality and to changes in the defect chemistry. It is suggested that growth within oxygen environments leads to suppression of oxygen vacancy (Vo) donors and formation of Zn vacancy (VZn) acceptors, resulting in highly resistive films. After annealing treatment, the activation of Ga donors is enhanced, Vo donors are annihilated, and crystalline quality is improved, increasing the electron mobility and the concentration. After annealing in Zn vapor, Zn interstitial donors are introduced, further increasing the electron concentration.

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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 31
  • No :6
  • Pages :320-324
  • Received Date : 2021-03-31
  • Revised Date : 2021-05-07
  • Accepted Date : 2021-05-13
  • DOI :https://doi.org/10.3740/MRSK.2021.31.6.320
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