All Issue

2026 Vol.36, Issue 5 Preview Page

Research Paper

Growth Mechanism and Location Control of Black Phosphorus in Mineralizer-Assisted Synthesis

미네랄라이저 보조 합성에서 흑린의 성장 메커니즘 및 위치 제어

Yooyeon Jo1†
조 유연1†
1Department of Semiconductor Materials Engineering, Sun Moon University, Asan 31460, Republic of Korea
1선문대학교 반도체소재공학과
†Corresponding author E-Mail : yooyeonjo@sunmoon.ac.kr (Y. Jo, Sun Moon Univ.)
27 May 2026. pp. 178-185
PDF XML Citation
Abstract

Since the first mechanical exfoliation of graphene in 2004, two-dimensional materials have been extensively studied due to their distinctive electrical and optical properties combined with atomic-scale thickness. Black phosphorus has emerged as a promising two-dimensional material because of its thickness-dependent bandgap, relatively high carrier mobility, and intrinsic in-plane anisotropy. It was first synthesized in 1914 using high-pressure techniques involving several gigapascals. A mineralizer-assisted synthesis method was introduced in 2007, enabling growth under ambient pressure without the use of highly toxic reagents. Despite these advances, black phosphorus obtained by conventional methods is typically in bulk form and the growth mechanism in the ampoule remains unclear. In this study, the growth location and behavior of black phosphorus are investigated using a quartz ampoule-based mineralizer-assisted synthesis method. The growth location and morphology of black phosphorus are dependent on the experimental configuration, particularly the presence of mineralizer-related compounds and metal-coated substrates. We demonstrate that Sn-P-I compounds and metal-induced reactions can effectively control the growth location, and provide insights toward thin-film black phosphorus synthesis.

Keywords
2D materials
black phosphorus
mineralizer-assisted method
growth mechanism
References
1

B. Radisavljevic, M. B. Whitwick and A. Kis, ACS Nano, 5, 9934 (2011).

10.1021/nn203715c
2

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov and A. K. Geim, Proc. Natl. Acad. Sci., 102, 10451 (2005).

10.1073/pnas.050284810216027370PMC1180777
3

X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo and R. S. Ruoff, Science, 324, 1312 (2009).

10.1126/science.1171245
4

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva and A. A. Firsov, Science, 306, 666 (2004).

10.1126/science.1102896
5

Y.-M. Lin, C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H.-Y. Chiu, A. Grill and P. Avouris, Science, 327, 662 (2010).

10.1126/science.1184289
6

K. F. Mak, C. Lee, J. Hone, J. Shan and T. F. Heinz, Phys. Rev. Lett., 105, 136805 (2010).

10.1103/PhysRevLett.105.136805
7

C. Dimitrakopoulos, Y.-M. Lin, A. Grill, D. B. Farmer, M. Freitag, Y. Sun, S.-J. Han, Z. Chen, K. A. Jenkins, Y. Zhu, Z. Liu, T. J. McArdle, J. A. Ott, R. Wisnieff and P. Avouris, J. Vac. Sci. Technol. B, 28, 985 (2010).

10.1116/1.3480961
8

C. Dimitrakopoulos, A. Grill, T. J. McArdle, Z. Liu, R. Wisnieff and D. A. Antoniadis, Appl. Phys. Lett., 98, 222105 (2011).

10.1063/1.3595945
9

Y. M. Lin, A. Valdes-Garcia, S.-J. Han, D. B. Farmer, I. Meric, Y. Sun, Y. Wu, C. Dimitrakopoulos, A. Grill, P. Avouris and K. A. Jenkins, Science, 332, 1294 (2011).

10.1126/science.1204428
10

M. Batmunkh, M. Bat-Erdene and J. G. Shapter, Adv. Mater., 28, 8586 (2016).

10.1002/adma.201602254
11

R. Gusmão, Z. Sofer and M. Pumera, Angew. Chem. Int. Ed., 56, 8052 (2017).

10.1002/anie.201610512
12

P. Chen, N. Li, X. Chen, W.-J. Ong and X. Zhao, 2D Mater., 5, 014002 (2017).

10.1088/2053-1583/aa8d37
13

P. W. Bridgman, J. Am. Chem. Soc., 36, 1344 (1914).

10.1021/ja02184a002
14

P. W. Bridgman, Phys. Rev., 3, 489 (1914).

10.1103/PhysRev.3.489
15

P. W. Bridgman, J. Am. Chem. Soc., 38, 609 (1916).

10.1021/ja02260a008
16

R. W. Keyes, Phys. Rev., 92, 580 (1953).

10.1103/PhysRev.92.580
17

L.-Q. Sun, M.-J. Li, K. Sun, S.-H. Yu, R.-S. Wang and H.-M. Xie, J. Phys. Chem. C, 116, 14772 (2012).

10.1021/jp302265n
18

S. Endo, Y. Akahama, S. Terada and S. Narita, Jpn. J. Appl. Phys., 21, L482 (1982).

10.1143/JJAP.21.L482
19

H. Krebs, H. Weitz and K. H. Worms, Z. Anorg. Allg. Chem., 280, 119 (1955).

10.1002/zaac.19552800110
20

A. Brown and S. Rundqvist, Acta Crystallogr., 19, 684 (1965).

10.1107/S0365110X65004140
21

S. Lange, P. Schmidt and T. Nilges, Inorg. Chem., 46, 4028 (2007).

10.1021/ic062192q
22

M. Köpf, N. Eckstein, D. Pfister, C. Grotz, I. Krüger, M. Greiwe, T. Hansen, H. Kohlmann and T. Nilges, J. Cryst. Growth, 405, 6 (2014).

10.1016/j.jcrysgro.2014.07.029
23

S. Li, X. Liu, X. Fan, Y. Ni, J. Miracle, N. Theodoropoulou, J. Sun, S. Chen, B. Lv and Q. Yu, Cryst. Growth Des., 17, 6579 (2017).

10.1021/acs.cgd.7b01239
24

H. Wang, Y. Song, G. Huang, F. Ding, L. Ma, N. Tian, L. Qiu, X. Li, R. Zhu, S. Huang, H. Yan, X. H. Chen, L. Ding, C. Zheng, W. Ruan and Y. Zhang, Nat. Mater., 23, 470 (2024).

25

C. Chen, Y. Yin, R. Zhang, Q. Yuan, Y. Xu, Y. Zhang, J. Chen, Y. Zhang, C. Li, J. Wang, J. Li, L. Fei, Q. Yu, Z. Zhou, H. Zhang, R. Cheng, Z. Dong, X. Xu, A. Pan, K. Zhang and J. He, Nat. Mater., 22, 717 (2023).

10.1038/s41563-023-01516-1
26

F. Xia, H. Wang and Y. Jia, Nat. Commun., 5, 4458 (2014).

10.1038/ncomms5458
27

J. Cheng, L. Gao, T. Li, S. Mei, C. Wang, B. Wen, W. Huang, C. Li, G. Zheng, H. Wang and H. Zhang, Nano-Micro Lett., 12, 179 (2020).

10.1007/s40820-020-00510-534138158PMC7770910
28

J. Li, Z. Gao, X. Ke, Y. Lv, H. Zhang, W. Chen, W. Tian, H. Sun, S. Jiang, X. Zhou, T. Zuo, L. Xiao, M. Sui, S. Tong, D. Tang, B. Da, K. Yamaura, X. Tu, Y. Li, Y. Shi, J. Chen, B. Jin, L. Kang, W. Xu, H. Wang and P. Wu, Small, 14, 1702501 (2018).

10.1002/smll.201702501
29

E. Flores, J. R. Ares, A. Castellanos-Gomez, M. Barawi, I. J. Ferrer and C. Sánchez, Appl. Phys. Lett., 106, 022102 (2015).

10.1063/1.4905636
30

Y. Jo, Ph. D. Thesis, University of Massachusetts, Amherst (2021).

31

S. Fürtauer, D. Li, D. Cupid and H. Flandorfer, Intermetallics, 34, 142 (2013).

10.1016/j.intermet.2012.10.00427087755PMC4819024
32

Y. Dai, P. Lu, Z. Cao, C. T. Campbell and Y. Xia, Chem. Soc. Rev., 47, 4314 (2018).

10.1039/C7CS00650K
33

N. Eckstein, A. Hohmann, R. Weihrich, T. Nilges and P. Schmidt, Z. Anorg. Allg. Chem., 639, 2741 (2013).

10.1002/zaac.201300327
34

A. Pfitzner, M. F. Bräu, J. Zweck, G. Brunklaus and H. Eckert, Angew. Chem. Int. Ed., 43, 4228 (2004).

10.1002/anie.200460244
Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 36
  • No :5
  • Pages :178-185
  • Received Date : 2026-02-10
  • Revised Date : 2026-03-22
  • Accepted Date : 2026-04-09
  • DOI :https://doi.org/10.3740/MRSK.2026.36.5.178
Journal Informaiton Korean Journal of Materials Research Korean Journal of Materials Research
Online Submission
  • scopus
  • NRF
  • KOFST
  • crossref crossmark
  • crossref cited-by
  • crosscheck
  • open access
  • ccl
Journal Informaiton Journal Informaiton - close