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2021 Vol.31, Issue 3 Preview Page
Improvement of Optical and Electrical Properties of AZO Thin Films by Controlling Fluorine Concentration

F 농도 조절을 통한 AZO 박막의 광학적 전기적 특성 향상

Suyoung Jang1
,
Jun Sung Jang1
,
Eunae Jo1
,
Vijay Chandraknt Karade1
,
Jihun Kim3
,
Jong-Ha Moon1
,
Jin Hyeok Kim12†
장 수영1
,
장 준성1
,
조 은애1
,
Vijay Chandrakant Karade1
,
김 지훈3
,
문 종하1
,
김 진혁12†
1Department of Materials Science and Engineering, Chonnam National University, 77 Youngbong-ro, Buk-Gu, Gwangju 61186, Republic of Korea
2Optoelectronics Convergence Research Center, Chonnam National University, 77 Youngbong-ro, Buk-Gu, Gwangju 61186, Republic of Korea
3School of Integrated Technology, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
1전남대학교 신소재공학과
2전남대학교 광전자융합기술연구소
3전기전자컴퓨터공학부, 광주과학기술원
†Corresponding author E-Mail : jinhyeok@chonnam.ac.kr (J. H. Kim, Chonnam Nat`l Univ.)
March 2021. pp. 150-155
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Abstract

Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 oC. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10−4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.

Keywords
solar cells
thin films
transparent conducting electrode
F
Al co-doped ZnO (FAZO)
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Information
  • Publisher :Materials Research Society of Korea
  • Publisher(Ko) :한국재료학회
  • Journal Title :Korean Journal of Materials Research
  • Journal Title(Ko) :한국재료학회지
  • Volume : 31
  • No :3
  • Pages :150-155
  • Received Date : 2021-01-25
  • Revised Date : 2021-02-09
  • Accepted Date : 2021-02-10
  • DOI :https://doi.org/10.3740/MRSK.2021.31.3.150
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