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ISSN : 1225-0562(Print)
ISSN : 2287-7258(Online)
Korean Journal of Materials Research Vol.29 No.7 pp.408-411
DOI : https://doi.org/10.3740/MRSK.2019.29.7.408

The Tunneling Effect at Semiconductor Interfaces by Hall Measurement

Teresa Oh
Department of Semiconductor Engineering, Cheongju University, Republic of Korea
Corresponding author
E-Mail : teresa@cju.ac.kr (T. Oh, Cheongju Univ.)

Abstract

ZTO/n-Si thin film is produced to investigate tunneling phenomena by interface characteristics by the depletion layer. For diversity of the depletion layer, the thin film of ZTO is heat treated after deposition, and the gpolarization is found to change depending on the heat treatment temperature and capacitance. The higher the heat treatment temperature is, the higher the capacitance is, because more charges are formed, the highest at 150 °C. The capacitance decreases at 200 °C. ZTO heat treated at 150 °C shows tunneling phenomena, with low non-resistance and reduced charge concentration. When the carrier concentration is low and the resistance is low, the depletion layer has an increased potential barrier, which results in a tunneling phenomenon, which results in an increase in current. However, the ZTO thin film with high charge or high resistance shows a Schottky junction feature. The reason for the great capacitance increase is the increased current due to tunneling in the depletion layer.

홀측정을 이용한 ZTO 반도체 박막계면에서의 터널링 효과

오데레사
청주대학교 반도체공학과

초록

Figure

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