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ISSN : 1225-0562(Print)
ISSN : 2287-7258(Online)
Korean Journal of Materials Research Vol.28 No.11 pp.659-662

Effect of Growth Methods of InAs Quntum Dots on Infrared Photodetector Properties

Dong-Bum Seo1, Je-hwan Hwang2, Boram Oh2, Sam Kyu Noh2, Jun Oh Kim2, Sang Jun Lee2, Eui-Tae Kim1†
1Department of Materials Science & Engineering, Chungnam National University, Daejeon 34134, Republic of Korea
2Division of Convergence Technology, Korea Research Institute of Standard Science,
Daejeon 34113, Republic of Korea
Corresponding author
E-Mail : (E.-T. Kim, Chungnam Nat'l Univ.)


We report the properties of infrared photodetectors based on two kinds of quantum dots(QDs): i) 2.0 ML InAs QDs by the Stranski-Krastanov growth mode(SK QDs) and ii) sub-monolayer QDs by 4 × [0.3 ML/1 nm In0.15Ga0.85As] deposition(SML QDs). The QD infrared photodetector(QDIP) structure of n+-n(QDs)-n+ is epitaxially grown on GaAs (100) wafers using molecular-beam epitaxy. Both the bottom and top contact GaAs layers are Si doped at 2 × 1018/cm3. The QD layers are grown with Si doping of 2 × 1017/cm3 and capped by an In0.15Ga0.85As layer at 495 oC. The photoluminescence peak(1.24 eV) of the SML QDIP is blue-shifted with respect to that (1.04 eV) of SK QDIPs, suggesting that the electron ground state of SML QDIP is higher than that of the SK QDIP. As a result, the photoresponse regime(~9-14 μm) of the SML QDIP is longer than that (~6-12 μm) of the SK QDIP. The dark current of the SML QDIP is two orders of magnitude smaller value than that of the SK QDIP because of the inserted Al0.08Ga0.92As layer.

InAs 양자점 형성 방법이 양자점 적외선 소자 특성에 미치는 효과

서동범1, 황제환2, 오보람2, 노삼규2, 김준오2, 이상준2, 김의태1†
1충남대학교 공과대학 신소재공학과,2한국표준과학연구원 융합물성측정센터