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ISSN : 1225-0562(Print)
ISSN : 2287-7258(Online)
Korean Journal of Materials Research Vol.27 No.9 pp.471-476
DOI : https://doi.org/10.3740/MRSK.2017.27.9.471

Preperation of Silicon Carbide Oxidation Protection Film on Carbon Thermal Insulator Using Polycarbosilane and Its Characterization

Su-Bin Ahn, Yoonjoo Lee, Jung-Won Bang, Dong-Geun Shin, Woo-Teck Kwon

Abstract

In order to improve the high temperature oxidation resistance and lifespan of mat type porous carbon insulation, SiC was coated on carbon insulation by solution coating using polycarbosilane solution, curing in an oxidizing atmosphere at 200 oC, and pyrolysis at temperatures up to 1200 oC. The SiOC phase formed during the pyrolysis process was converted into SiC crystals as the heat treatment temperature increased, and a SiC coating with a thickness of 10-15 nm was formed at 1600 oC. The SiC coated specimen showed a weight reduction of 8.6 % when it was kept in an atmospheric environment of 700 oC for 1 hour. On the other hand, the thermal conductivity was 0.17W/mK, and no difference between states before and after coating was observed at all.

 

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