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ISSN : 1225-0562(Print)
ISSN : 2287-7258(Online)
Korean Journal of Materials Research Vol.24 No.5 pp.266-270
DOI : https://doi.org/10.3740/MRSK.2014.24.5.266

Effect of First-Stage Growth Manipulation and Polarity of SiC Substrates on AlN Epilayers Grown Using Plasma-Assisted Molecular Beam Epitaxy

Le, Duy Duc, Kim, Dong Yeob, Hong, Soon-Ku

Abstract

Aluminum nitride(AlN) films were grown on the C-face and on the Si-face of (0001) silicon carbide(SiC) substrates using plasma-assisted molecular-beam epitaxy(PA-MBE). This study was focused on first-stage growth manipulation prior to the start of AlN growth. Al pre-exposure, N-plasma pre-exposure, and simultaneous exposure(Al and N-plasma) procedures were used in the investigation. In addition, substrate polarity and, first-stage growth manipulation strongly affected the growth and properties of the AlN films. Al pre-exposure on the C-face and on the Si-face of SiC substrates prior to initiation of the AlN growth resulted in the formation of hexagonal hillocks on the surface. However, crack formation was observed on the C-face of SiC substrates without Al pre-exposure. X-ray rocking-curve measurements revealed that the AlN epilayers grown on the Si-face of the SiC showed relatively lower tilt and twist mosaic than did the epilayers grown on the C-face of the SiC. The results from the investigations reported in this paper indicate that the growth conditions on the Si-face of the SiC without Al pre-exposure was highly preferred to obtain the overall high-quality AlN epilayers formed using PA-MBE.

Effect of First-Stage Growth Manipulation and Polarity of SiC Substrates on AlN Epilayers Grown Using Plasma-Assisted Molecular Beam Epitaxy

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