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ISSN : 1225-0562(Print)
ISSN : 2287-7258(Online)
Korean Journal of Materials Research Vol.23 No.12 pp.732-736
DOI : https://doi.org/10.3740/MRSK.2013.23.12.732

Effect of V/III Ratio Variation on the Properties of AlN Epilayers in HVPE

Son, Hoki, Lim, Tae-Young, Lee, Mijai, Kim, Jin-Ho, Kim, Younghee, Hwang, Jonghee, Oh, Hae-Kon, Choi, YoungJun, Lee, Hae-Yong, Kim, Hyung Sun

Abstract

AlN epilayers were grown on a c-plane sapphire substrate using hydride vapor phase epitaxy (HVPE). A series of AlN epilayers were grown at 1120˚C with V/III ratios 1.5, 2.5 and 3.5, and the influence of V/III ratio on their properties was investigated. As the V/III ratio was increased, the surface roughness (RMS roughness), Raman shift of E2 high peaks and full-width at half-maximum (FWHM) of symmetrical (002) & asymmetrical (102) of the AlN epilayers increased. However, the intensities of the Raman E2 high peaks were reduced. This indicates that the crystal quality of the grown AlN epilayers was degraded by activation of the parasitic reaction as the V/III ratio was increased. Smooth surface, stress free and high crystal quality AlN epilayers were obtained at the V/III ratio of 1.5. The crystal quality of AlNepilayers is worsened by the promotion of three-dimensional (3D) growth mode when the flow of NH3 is high.

HVPE법에 의해 성장된 AlN 에피층의 V/III비에 따른 특성변화

손호기, 임태영, 이미재, 김진호, 김영희, 황종희, 오해곤, 최영준, 이혜용, 김형순

초록