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ISSN : 1225-0562(Print)
ISSN : 2287-7258(Online)
Korean Journal of Materials Research Vol.19 No.8 pp.452-456
DOI : https://doi.org/10.3740/MRSK.2009.19.8.452

Na Doping Properties of Cu(In,Ga)Se2 Absorber Layer Using NaF Interlayer on Mo Substrate

Park, Tae-Jung, Shin, Dong-Hyeop, Ahn, Byung-Tae, Yun, Jae-Ho

Abstract

In high-efficiency Cu(In,Ga)Se2 solar cells, Na is doped into a Cu(In,Ga)Se2 light-absorbing layer from sodalime-glass substrate through Mo back-contact layer, resulting in an increase of device performance. However, this supply of sodium is limited when the process temperature is too low or when a substrate does not supply Na. This limitation can be overcome by supplying Na through external doping. For Na doping, an NaF interlayer was deposited on Mo/glass substrate. A Cu(In,Ga)Se2 absorber layer was deposited on the NaF interlayer by a three-stage co-evaporation process As the thickness of NaF interlayer increased, smaller grain sizes were obtained. The resistivity of the NaF-doped CIGS film was of the order of 103Ω·cm indicating that doping was not very effective. However, highest conversion efficiency of 14.2% was obtained when the NaF thickness was 25 nm, suggesting that Na doping using an NaF interlayer is one of the possible methods for external doping.

Mo 기판위의 NaF 중간층을 이용한 Cu(In,Ga)Se2 광흡수층의 Na 도핑특성에 관한 연구

박태정, 신동협, 안병태, 윤재호

초록