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ISSN : 1225-0562(Print)
ISSN : 2287-7258(Online)
Korean Journal of Materials Research Vol.19 No.1 pp.50-53
DOI : https://doi.org/10.3740/MRSK.2009.19.1.50

Effect of SiO2 Layer of Si Substrate on the Growth of Multiwall-Carbon Nanotubes

Kim, Geum-Chae, Lee, Soo-Kyoung, Kim, Sang-Hyo, Hwang, Sook-Hyun, Jeon, Min-Hyon

Abstract

Multi-walled carbon nanotubes (MWNTs) were synthesized on different substrates (bare Si and SiO2/Si substrate) to investigate dye-sensitized solar cell (DSSC) applications as counter electrode materials. The synthesis of MWNTs samples used identical conditions of a Fe catalyst created by thermal chemical vapor deposition at 900˚C. It was found that the diameter of the MWNTs on the Si substrate sample is approximately 5~10nm larger than that of a SiO2/Si substrate sample. Moreover, MWNTs on a Si substrate sample were well-crystallized in terms of their Raman spectrum. In addition, the MWNTs on Si substrate sample show an enhanced redox reaction, as observed through a smaller interface resistance and faster reaction rates in the EIS spectrum. The results show that DSSCs with a MWNT counter electrode on a bare Si substrate sample demonstrate energy conversion efficiency in excess of 1.4 %.

실리콘 기판의 산화층이 다중벽 탄소나노튜브 성장에 미치는 영향

김금채, 이수경, 김상효, 황숙현, 전민현

초록